IRL620 Search Results

IRL620

Abstract: SiHL620 SiHL620-E3 IRL620PBF
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated

SMD-220

Abstract: smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220
Contextual Info: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer

SiHL620

Abstract: SiHL620-E3 IRL620PBF IRL620
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive

Contextual Info: IRL620 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology o II ♦ Rugged Gate Oxide Technology cn > ♦ Logic-Level Gate Drive ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area

IRL620

Abstract: DDEC144 DS-10 IRL621 diode DS10
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL620/621 FEATURES • • • • • • • • Lower R ds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

T518

Contextual Info: IRL620 A d van ced Power MOSFET FEATURES 200 V 0.8Q > Rugged G ate O xide T e ch n o lo g y cn ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge

Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated

Contextual Info: PD- 95670 IRL620PbF • Lead-Free www.irf.com 1 8/2/04 IRL620PbF 2 www.irf.com IRL620PbF www.irf.com 3 IRL620PbF 4 www.irf.com IRL620PbF www.irf.com 5 IRL620PbF 6 www.irf.com IRL620PbF www.irf.com 7 IRL620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches

Contextual Info: IRL620A Advanced Power MOSFET FEATURES B ^D S S • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^D S on = ■ Lower Leakage Current : 10 m A (M ax.) @ VDS = 200V ■ Lower ROS<ON) : 0.609£2 (Typ.)

Contextual Info: IRL620A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level G ate Drive 0.8Q > cn Rugged G ate O xide T e ch n o lo g y a ♦ II ^D S o n = ♦ A va la n ch e Rugged T e ch n o lo g y ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge

DIODE smd marking 52A

Contextual Info: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer

DIODE smd marking 52A

Abstract: smd diode marking 12c smd diode 2F SMD-220 SMD tr 2f smd marking KH smd diode marking 20W smd220 AN-994 IRL620S
Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω

IRL620

Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 200V

ifr 350 mosfet

Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
Contextual Info: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)

IRF MOSFET 100A 200v

Abstract: IRL620A
Contextual Info: IRL620A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

IRL620S

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL620S FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRL620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology o II ♦ Rugged Gate Oxide Technology cn > ♦ Logic-Level Gate Drive ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area

Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated

Contextual Info: PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 200V RDS(on) = 0.80 Ω ID = 5.2A Description

Contextual Info: PD- 95670 IRL620PbF • Lead-Free 1 IRL620PbF 2 IRL620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

Contextual Info: International PD91217 liS Rectifier_ IRL620 HEXFET Power M O S F E T • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • R d s ON Specified at V q s = 4V & 5V • Fast Switching • Ease of paralleling • Simple Drive Requirements