SIHL620 Search Results
SIHL620 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHL620S-GE3 | Vishay Siliconix | LOGIC MOSFET N-CHANNEL 200V | Original | 1.51MB | 10 | ||
| SIHL620STRL-GE3 | Vishay Siliconix | LOGIC MOSFET N-CHANNEL 200V | Original | 1.51MB | 10 |
SIHL620 Price and Stock
Vishay Intertechnologies SIHL620S-GE3Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 21A; 50W |
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SIHL620S-GE3 | 1 |
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SIHL620 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IRL620
Abstract: SiHL620 SiHL620-E3 IRL620PBF
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irl620sihl6202002/95/eco-220ab+3 | |
SiHL620
Abstract: SiHL620-E3 IRL620PBF IRL620
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irl620sihl620o-22018-jul-08+2 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
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irl620sihl6202002/95/eco-220ab+1 | |
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Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irl620ssihl620so-2632002/95/ec+3 | |
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Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irl620ssihl620s2002/95/eco-263+1 | |
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Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irl620ssihl620s2002/95/eco-263+1 | |
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Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
irl620ssihl620s2002/95/eco-263+2 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
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irl620sihl6202002/95/eco-220ab+2 | |
AN609
Abstract: IRL620 SiHL620 308-196
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irl620sihl620an6095620m+7 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive |
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irl620sihl620o-22012-mar-07 | |
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Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irl620ssihl620s2002/95/eco-263+1 | |
SiHL620S
Abstract: 52a21
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irl620ssihl620ssmd-22012-mar-07+1 | |
SiHL620S
Abstract: IRL620S SiHL620S-E3
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irl620ssihl620so-26318-jul-08+1 | |
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Contextual Info: IRL620S_RC, SiHL620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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irl620ssihl620san609configurap-10+4 | |
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IRL620PBF
Abstract: 52A21
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irl620sihl6202002/95/eco-220ab+4 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
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irl620sihl6202002/95/eco-220ab+2 | |
SiHL620S
Abstract: IRL620S SiH530S-E3 SiH530STR SMD-220 IRL530STRR SMD DIODE marking AB
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irl620ssihl620ssmd-22018-jul-08+4 | |
SiHL620-E3Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
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irl620sihl6202002/95/eco-220ab+3 | |
part marking ab
Abstract: IRL620 SiHL620 SiHL620-E3 D3118
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irl620sihl620o-22018-jul-08+3 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive |
Original |
irl620sihl6202002/95/eco-220+1 | |
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Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
irl620sihl6202002/95/eco-220ab+2 | |