MOSFET MTTF Search Results

HTRB

Abstract: mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report
Contextual Info: AOS Semiconductor Reliability Report AO3160, 600V 0.04A N-Channel MOSFET Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 This report applies for 600V 0.04A N-Channel MOSFET AO3160 The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to

MRF5P21180

Abstract: CDR33BX104AKWS MRF5P21180R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

MRF9180R6

Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

MRF5P21180

Abstract: J-1389 MRF5P21180HR6
Contextual Info: MOTOROLA Order this document by MRF5P21180HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5P21180HR6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF5P21180

Contextual Info: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF5P21180

Abstract: 539 MOTOROLA transistor
Contextual Info: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

nippon capacitors

Abstract: 2508051107Y0 3A412 MRF9210R3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

C21B1

Abstract: MRF9180 MRF9180R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

MRF6P21190H

Abstract: AN1955 JESD22 MRF6P21190HR6 A114 A115
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6P21190HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6P21190HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF5P21180HR6

Abstract: MRF5P21180 AN1955 CDR33BX104AKWS Motorola 7
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5P21180HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

nippon capacitors

Abstract: transistor J585
Contextual Info: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

200 watt hf mosfet

Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE
Contextual Info: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure

Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this

sd2931 fm

Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Contextual Info: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold

RF push pull power amplifier

Abstract: MRF9120
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this

mosfet mttf

Abstract: ALD-214012PJ111 MIL-HDBK-217F 214012P 214012 MTTF ALD-214012
Contextual Info: CTR-4076-X PRODUCT NAME: ALD-214012PJ111 TEMPERATURES: degC 25 50 75 TOTAL: (fit) 532 649 889 1,493 MTTF: (hour) 1,880,639 1,541,359 1,125,289 669,698 MTTF [hour] FAILURE RATE TABLE: MIL-HDBK-217-F Data of MOSFET used the failure rate of obtaining from the manufacturer

731 MOSFET

Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.

ATC100B101JT500XT

Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with

2060 d

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S21140H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. MRF6S21140HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21140HSR3

AN1955

Abstract: MRF5S19090LR3 MRF5S19090LSR3 336 motorola
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090LSR3

AN1955

Abstract: MRF5S19090HR3 MRF5S19090HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090HSR3

AN1955

Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3

465B

Abstract: AN1955 MRF5S19150 MRF5S19150HR3 MRF5S19150HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19150H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19150HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150HSR3