MOSFET IRF 150 Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

MOSFET IRF 940

Abstract: irf 940 irf 48v mosfet power MOSFET IRF data DIODE 851 tr/MOSFET IRF 940
Contextual Info: IRF MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 1

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 8.0A, 500V, RDS on = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

DIODE 83A

Abstract: AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 MOSFET IRF 94
Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

AN1001

Abstract: EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 irf 48v mosfet
Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

1RFP9240

Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
Contextual Info: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K

Contextual Info: IR F W /I7 4 0 A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRFR6215

Abstract: IRFU6215
Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V

IRFR6215PBF

Abstract: IRFR6215 IRFU6215
Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V

IRF Power MOSFET code marking

Abstract: audio power amplifier mosfet EIA-541 IRLR4343 IRLU4343 IRLU4343-701 R120 U120 digital audio mosfet 95394A
Contextual Info: PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved

IRF Power MOSFET code marking

Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Contextual Info: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V

Contextual Info: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 210a

Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

MOSFET IRF 940

Abstract: MOSFET IRF IRLU7843 EIA-541 IRFU120 IRLR7843 R120 U120
Contextual Info: PD - 95440A IRLR7843PbF IRLU7843PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free HEXFET Power MOSFET

AN1001

Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Contextual Info: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001