MOSFET INPUT CAPACITANCE Search Results

ca3290

Abstract: CA3290A CA3290AE bipolar zener diodes 1N914 2N2102 C30809 CA3290E
Contextual Info: CA3290, CA3290A Data Sheet September 1998 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output • MOSFET Input Stage - Very High Input Impedance ZIN . . . . . . . . 1.7TΩ (Typ) - Very Low Input Current at V+ = 5V . . . . . . . 3.5pA (Typ)

dmn5l06dwk

Contextual Info: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7002W • Features SOT-323 Unit:mm 1.3±0.1 ● Low On-Resistance 2 2.3±0.15 ● Low Input Capacitance 1.25±0.1 1 0.525 0.65 ● Low Gate Threshold Voltage ● Fast Switching Speed 0.36 3 ● Low Input/Output Leakage

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

staircase generator

Abstract: Wien Bridge Oscillator opamp single-supply wein bridge oscillator Dual Ganged Potentiometer ca3140 application circuit ca3140 equivalents CA3600E darlington cascode second stage CA3085 CA5130
Contextual Info: CA5160 NOT RECOMMENDED FOR NEW DESIGNS 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output September 1998 Features Description • MOSFET Input Stage - Very High ZI; 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II; 5pA (Typ) at 15V Operation

pa 3029 b

Abstract: CA5160 CA5260 CA5260A CA5260AE CA5260AM CA5260AM96 CA5260E CA5260M CA5260M96
Contextual Info: CA5260, CA5260A 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage provides - Very High ZI = 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation = 2pA (Typ) at 5V Operation

RDX030N60

Contextual Info: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF520 Preliminary Power MOSFET 9.2A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF520 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high Input Impedance and high switching speed.

593D

Abstract: AN1204 ISL6605 ISL8118 ISL8118CRZ ISL8118IRZ TB379
Contextual Info: ISL8118 Data Sheet August 1, 2006 FN6325.0 3.3V to 20V, Single-Phase PWM Controller with Integrated 2A/4A MOSFET Drivers Features The ISL8118 is a single-phase PWM controller featuring an input voltage range of +3.3V to +20V and integrated MOSFET drivers. Utilizing voltage-mode operation with input voltage

REGULATOR IC 7915

Abstract: CA3160AS 7915, 15V regulator CA3130S 7915 circuit diagram GA3080
Contextual Info: HARRIS SEfllCOND SECTOR 4DE D 3 H a r r is • 43DS271 0D317ba 2 « H A S CA3160A CA3160 ' BiMOS Operational Amplifiers with MOSFET Input/CMOS Output A u gu st 1 9 9 1 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are Integrated circuit

593D

Abstract: ISL6605 ISL8118 ISL8118CRZ ISL8118IRZ TB347 TB379 ROHS panasonic
Contextual Info: ISL8118 Data Sheet April 7, 2009 FN6325.1 3.3V to 20V, Single-Phase PWM Controller with Integrated 2A/4A MOSFET Drivers Features The ISL8118 is a single-phase PWM controller featuring an input voltage range of +3.3V to +20V and integrated MOSFET drivers. Utilizing voltage-mode operation with input voltage

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2667 F3W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS (Unit : mm) Case : MTO-3P 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2663 N-Channel Enhancement type OUTLINE DIMENSIONS F1E90HVX2 Case : E-pack (Unit : mm) 900V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

F1E50VX2

Abstract: 2SK2177
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2668

Abstract: FP3W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

F16W60

Abstract: 2SK3012 F16W60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

NTE2976

Abstract: DIODE 240v 3a mosfet for dc to ac inverter
Contextual Info: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2675

Abstract: 160mJ FP7W90HVX2 16mj
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P (Unit : mm) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

FP20W50

Abstract: 2SK2197 FP20W50VX2 diode 10a 400v mosfet 20A 500V
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2197 FP20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2490

Abstract: F10F18VZ
Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2490 F10F18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 180V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.