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    MOSFET HIGH VOLTAGE Search Results

    MOSFET HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Datasheet
    TK4R9E15Q5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 120 A, 0.0049 Ω@10 V, High-speed diode, TO-220 Datasheet
    TK115V65Z5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 23 A, 0.115 Ω@10 V, High-speed diode, DFN 8×8 Datasheet
    TK095E65Z5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220 Datasheet
    TK5R0A15Q5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 76 A, 0.005 Ω@10 V, High-speed diode, TO-220SIS Datasheet

    MOSFET HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ultrasound piezoelectric array

    Abstract: mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver MD1213 ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213
    Contextual Info: MD1213 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high


    Original     		MD1213 MD1213 DSFP-MD1213 NR072007 ultrasound piezoelectric array mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 O-220 UF830L UF830-TA3-T UF830es QW-R502-046 PDF

    10n65

    Abstract: tf 10n65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65 10N65 QW-R502-588 tf 10n65 PDF

    627 DIODE

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high


    Original     		3N65A 3N65A QW-R502-627 627 DIODE PDF

    10n65

    Abstract: UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G PDF

    MD1210

    Abstract: MD1210K6-G MO-220 TC6320TG
    Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output


    Original     		MD1210 MD1210 DSFP-MD1210 C081309 MD1210K6-G MO-220 TC6320TG PDF

    f10n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 f10n65 PDF

    m1211

    Contextual Info: MD1211 High Speed, Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► The Supertex MD1211 is a high speed dual MOSFET driver. It is designed to drive high voltage N and P-channel MOSFET transistors for medical ultrasound and other applications


    Original     		MD1211 1000pF MS-012, F062308. DSFP-MD1211 NR070208 m1211 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


    Original     		9N70L-TA3-T 9N70G-TA3-at QW-R502-617 PDF

    9N70

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


    Original     		9N70L-TA3-T 9N70G-TA3-T QW-R502-617 9N70 PDF

    UF840

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840 PDF

    voltage level shifter 3.3V to 5V

    Abstract: ultrasound air ultrasound piezoelectric transducer for medical MD1210 MD1210K6-G TC6320TG SY QFN
    Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring


    Original     		MD1210 MD1210 DSFP-MD1210 B011507 voltage level shifter 3.3V to 5V ultrasound air ultrasound piezoelectric transducer for medical MD1210K6-G TC6320TG SY QFN PDF

    10N65C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65-C 10N65-C QW-R502-A79 10N65C PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 O-220 O-220F O-220F1 O-263 O-220F2 O-262 O-251 O-252 UF830L-Tat PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 O-220 O-220F O-220at QW-R502-119 PDF

    10N60L

    Abstract: 10N60G
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G PDF

    10n65

    Abstract: 10N65G-TA3-T utc10n65
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche


    Original     		10N65 O-220 10N65 O-220F O-220F1 O-263 QW-R502-588 10N65G-TA3-T utc10n65 PDF

    UF630L-TM3-T

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF630 O-220 O-220F O-220F1 O-262 O-252 O-251 O-220 O-220F1 O-220F UF630L-TM3-T PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830 O-220 O-220F UF830L UF830-TA3-T UF830L-TA3-Tat QW-R502-046 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF630 O-220 O-220F O-220F1 O-220F2 O-262 O-251 O-252 QW-R502-049 PDF

    N Channel d- MOSFET

    Contextual Info: 02SK1847 JSS2SJ285 •P Channel Power MOSFET LD Series •Package : SANYO CP packaging - High-Voltage High-Speed Switching Applications - N Channel Power MOSFET (LD Series) •Package : SANYO CP packaging •High-Voltage High-Speed Switching Applications


    OCR Scan     		JSS2SJ285 02SK1847 2SJ286 2SK1848 02SK1813 02SK1871 N Channel d- MOSFET PDF

    REG IC 48V IN 12V 10A OUT

    Abstract: 48vdc smps circuit diagram 48V SMPS smps 48v 12v circuit diagram of mosfet based smps power supply 48V SMPS circuit REG IC 48V 40A 48V 10A SMPS circuit diagram REG IC 48V 5V 18V 10A OUT REG IC 48V IN 12V 10A OUT ic
    Contextual Info: ISL6144 Data Sheet February 2004 FN9131 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.


    Original     		ISL6144 FN9131 ISL6144 REG IC 48V IN 12V 10A OUT 48vdc smps circuit diagram 48V SMPS smps 48v 12v circuit diagram of mosfet based smps power supply 48V SMPS circuit REG IC 48V 40A 48V 10A SMPS circuit diagram REG IC 48V 5V 18V 10A OUT REG IC 48V IN 12V 10A OUT ic PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 10N60L QW-R502-119 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor


    Original     		UF730 O-252 O-251 O-220 O-220F UF730L-TA3-T UF730G-TA3-T UF730L-TF3-T UF730G-TF3-T UF730L-TM3-T PDF