MOSFET HIGH AMPERE Search Results

E3P102

Abstract: NTMSD3P102R2 SMD310 e3p1
Contextual Info: NTMSD3P102R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET

E3P303

Abstract: NTMSD3P303R2 SMD310 279-87
Contextual Info: NTMSD3P303R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET

NTMSD2P102LR2

Abstract: SMD310
Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

TL494

Abstract: TC429
Contextual Info: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

E3P303

Abstract: NTMSD3P303R2 NTMSD3P303R2G
Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

high-speed power mosfet 2Mhz

Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
Contextual Info: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

how mosfet irf540 acts as a regulator

Abstract: IRFP2504 MIC5012 wiring diagram for ge cr2943 PWM speed control of DC motor using IRF540 IRCZ44 IRF540 diode zener s4 MIC5011 MIC5013BM
Contextual Info: MIC5013 Micrel, Inc. MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side

IRCZ44 "cross reference"

Abstract: MIC5013BM KC1000-4T 4n35 optoisolator 12V 30A 4 pin Relay p 818 opto dual high side MOSFET driver with charge pump wiring diagram for ge cr2943 4N35 CONTROL CIRCUIT KC1000
Contextual Info: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side

SVDF8N60F

Abstract: 8N60
Contextual Info: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

push switch 6 leg

Abstract: relay 24v 50mA 4N35 CONTROL CIRCUIT MIC5013BM ircz4 IRF540 application MOSFET IRF540 IRCZ44 IRF540 MIC5010
Contextual Info: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver Final Information General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side

IRCZ44 "cross reference"

Abstract: wiring diagram for ge cr2943 12v 10A dc motor mosfet driver PWM dc speed control of DC motor using IRF540 CR2943 IRCZ44 HP opto-isolator Zener Diodes 24v 10w IRFP044 MIC5010
Contextual Info: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver Final Information General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side

Contextual Info: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

MTP12P10G

Abstract: p-channel to-220 MTP12 MTP12P10
Contextual Info: MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P−Channel TO−220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS

mosfet transistor 400 volts.100 amperes

Contextual Info: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

Amp. mosfet 1000 watt

Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
Contextual Info: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

t2p50e

Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
Contextual Info: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

t2p50e

Contextual Info: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

t1n50e

Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

2N40E

Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

2N40E

Abstract: t2n40e
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

AN569

Abstract: MTP1N50E mtp1n
Contextual Info: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to