MOSFET HIGH AMPERE Search Results

E3P102

Abstract: NTMSD3P102R2 SMD310 e3p1
Contextual Info: NTMSD3P102R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET

E3P303

Abstract: NTMSD3P303R2 SMD310 279-87
Contextual Info: NTMSD3P303R2 Product Preview FETKY P–Channel Enhancement–Mode Power MOSFET and Schottky Diode Dual SO–8 Package http://onsemi.com Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , MOSFET

NTMSD2P102LR2

Abstract: SMD310
Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

TL494

Abstract: TC429
Contextual Info: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

E3P303

Abstract: NTMSD3P303R2 NTMSD3P303R2G
Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

high-speed power mosfet 2Mhz

Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
Contextual Info: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output

SVDF8N60F

Abstract: 8N60
Contextual Info: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

2P50EG

Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

t1n50e

Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

2N40E

Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

2N40E

Abstract: t2n40e
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

AN569

Abstract: MTP1N50E mtp1n
Contextual Info: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to

AN569

Abstract: MTW7N80E
Contextual Info: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

AN569

Abstract: MTW10N100E
Contextual Info: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTY25N60E

Abstract: AN569 TL 188 TRANSISTOR PIN DIAGRAM
Contextual Info: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

1N50E

Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

t2n50e

Abstract: 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E
Contextual Info: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

MTP2P50E

Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

TL 188 TRANSISTOR PIN DIAGRAM

Abstract: AN569 MTY20N50E
Contextual Info: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTW8N60E-D

Abstract: MTW8N60E application notes AN569 MTW8N60E to-247AE
Contextual Info: MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTY25N60E

Abstract: AN569
Contextual Info: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

AN569

Abstract: MTP2P50E mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed