MOSFET FOR POWER ELECTRONIC Search Results
MOSFET FOR POWER ELECTRONIC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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CA3130AT |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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MOSFET FOR POWER ELECTRONIC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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equivalent 2sk2837 mosfetContextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards. |
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UT6302 UT6302 UT6302L-AE2-R UT6302G-AE2-R UT6302L-AE3-R UT6302G-AE3-R OT-23-3 OT-23 QW-R502-363 | |
Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z |
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TPD7211F TPD7211F SON8-P-0303-0 7211F | |
AN10273
Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
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AN10273 philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, |
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UT6302 UT6302 UT6302G-AE3-R OT-23 6302G QW-R502-363 | |
transistor npn high speed switching
Abstract: TRANSISTOR mosfet k2
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FA7622P OP-21) 600mA) transistor npn high speed switching TRANSISTOR mosfet k2 | |
Contextual Info: Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power |
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T2955V
Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
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MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel | |
15N06VL
Abstract: 15n06v 06vl diode sod-123 marking code 12
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MTD15N06VL MTD15N06VL/D 15N06VL 15n06v 06vl diode sod-123 marking code 12 | |
T2-955V
Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
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MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C | |
15N06VL
Abstract: 15n06v 15N06 MTD15N06VL MTD15N06VL1 MTD15N06VLT4 AN569
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MTD15N06VL r14525 MTD15N06VL/D 15N06VL 15n06v 15N06 MTD15N06VL MTD15N06VL1 MTD15N06VLT4 AN569 | |
15N06VL
Abstract: transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v
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MTD15N06VL MTD15N06VL/D 15N06VL transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v | |
P65 MOSFET
Abstract: IRF7353D2
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IRF7353D2 7353d2 P65 MOSFET IRF7353D2 | |
AN569
Abstract: MTB23P06V MTB23P06VT4
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MTB23P06V r14525 MTB23P06V/D AN569 MTB23P06V MTB23P06VT4 | |
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3055V
Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
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MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v | |
3055V
Abstract: MTD3055VT4 MTD3055V 369D AN569
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MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569 | |
AN569
Abstract: MTB30P06V MTB30P06VT4
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MTB30P06V r14525 MTB30P06V/D AN569 MTB30P06V MTB30P06VT4 | |
t3055vl
Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
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MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4 | |
5P06V
Abstract: AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power
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MTD5P06V r14525 MTD5P06V/D 5P06V AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power | |
AN569
Abstract: MTB52N06V MTB52N06VT4
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MTB52N06V r14525 MTB52N06V/D AN569 MTB52N06V MTB52N06VT4 | |
MTP2955
Abstract: MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel
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MTP2955V r14525 MTP2955V/D MTP2955 MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel | |
T30N06VL
Abstract: AN569 MTB30N06VL MTB30N06VLT4
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MTB30N06VL r14525 MTB30N06VL/D T30N06VL AN569 MTB30N06VL MTB30N06VLT4 | |
TH 2190 Transistor
Abstract: TH 2190 mosfet AN569 MTP30P06V QT824
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MTP30P06V r14525 MTP30P06V/D TH 2190 Transistor TH 2190 mosfet AN569 MTP30P06V QT824 | |
a6059h
Abstract: A6053M a6062h a6051m A6052M STR-A6059M thermistor type R53
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STR-A6000 STR-A605Ã a6059h A6053M a6062h a6051m A6052M STR-A6059M thermistor type R53 |