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    MOSFET FOR POWER ELECTRONIC Search Results

    MOSFET FOR POWER ELECTRONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET FOR POWER ELECTRONIC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    equivalent 2sk2837 mosfet

    Contextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s


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    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.


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    UT6302 UT6302 UT6302L-AE2-R UT6302G-AE2-R UT6302L-AE3-R UT6302G-AE3-R OT-23-3 OT-23 QW-R502-363 PDF

    Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z


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    TPD7211F TPD7211F SON8-P-0303-0 7211F PDF

    AN10273

    Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
    Contextual Info: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.


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    AN10273 philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,


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    UT6302 UT6302 UT6302G-AE3-R OT-23 6302G QW-R502-363 PDF

    transistor npn high speed switching

    Abstract: TRANSISTOR mosfet k2
    Contextual Info: FA7622P M Bipolar 1C For Switching Power Supply Control • Description ■ Dimensions, mm The FA7622P(M) is a DC-DC converter 1C that can directly drive a power MOSFET. This 1C has all the necessary protection functions for a power MOSFET. It is optimum for


    OCR Scan
    FA7622P OP-21) 600mA) transistor npn high speed switching TRANSISTOR mosfet k2 PDF

    Contextual Info: Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power


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    T2955V

    Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
    Contextual Info: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel PDF

    15N06VL

    Abstract: 15n06v 06vl diode sod-123 marking code 12
    Contextual Info: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD15N06VL MTD15N06VL/D 15N06VL 15n06v 06vl diode sod-123 marking code 12 PDF

    T2-955V

    Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
    Contextual Info: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C PDF

    15N06VL

    Abstract: 15n06v 15N06 MTD15N06VL MTD15N06VL1 MTD15N06VLT4 AN569
    Contextual Info: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD15N06VL r14525 MTD15N06VL/D 15N06VL 15n06v 15N06 MTD15N06VL MTD15N06VL1 MTD15N06VLT4 AN569 PDF

    15N06VL

    Abstract: transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v
    Contextual Info: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD15N06VL MTD15N06VL/D 15N06VL transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v PDF

    P65 MOSFET

    Abstract: IRF7353D2
    Contextual Info: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint


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    IRF7353D2 7353d2 P65 MOSFET IRF7353D2 PDF

    AN569

    Abstract: MTB23P06V MTB23P06VT4
    Contextual Info: MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTB23P06V r14525 MTB23P06V/D AN569 MTB23P06V MTB23P06VT4 PDF

    3055V

    Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v PDF

    3055V

    Abstract: MTD3055VT4 MTD3055V 369D AN569
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569 PDF

    AN569

    Abstract: MTB30P06V MTB30P06VT4
    Contextual Info: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTB30P06V r14525 MTB30P06V/D AN569 MTB30P06V MTB30P06VT4 PDF

    t3055vl

    Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
    Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4 PDF

    5P06V

    Abstract: AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power
    Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTD5P06V r14525 MTD5P06V/D 5P06V AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power PDF

    AN569

    Abstract: MTB52N06V MTB52N06VT4
    Contextual Info: MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTB52N06V r14525 MTB52N06V/D AN569 MTB52N06V MTB52N06VT4 PDF

    MTP2955

    Abstract: MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel
    Contextual Info: MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTP2955V r14525 MTP2955V/D MTP2955 MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel PDF

    T30N06VL

    Abstract: AN569 MTB30N06VL MTB30N06VLT4
    Contextual Info: MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTB30N06VL r14525 MTB30N06VL/D T30N06VL AN569 MTB30N06VL MTB30N06VLT4 PDF

    TH 2190 Transistor

    Abstract: TH 2190 mosfet AN569 MTP30P06V QT824
    Contextual Info: MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTP30P06V r14525 MTP30P06V/D TH 2190 Transistor TH 2190 mosfet AN569 MTP30P06V QT824 PDF

    a6059h

    Abstract: A6053M a6062h a6051m A6052M STR-A6059M thermistor type R53
    Contextual Info: Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series General Descriptions Package The STR-A6000 series are power ICs for switching power supplies, incorporating a MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the


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    STR-A6000 STR-A605Ã a6059h A6053M a6062h a6051m A6052M STR-A6059M thermistor type R53 PDF