MOSFET ESD RATED Search Results

3055L transistor

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,

RFG60P06E

Abstract: P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06
Contextual Info: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 60V • 2kV ESD Rated The RFG60P06E incorporates ESD protection and is designed to withstand 2kV Human Body Model of ESD. • Related Literature Formerly developmental type TA09836.

JESD22-A108C

Abstract: JESD22-A108-C JESD22A-101-B
Contextual Info: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

JESD22-A108C

Abstract: 2N7002K
Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

SOT-323

Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

RFD8P06LESM9A

Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model

NVA4153NT1G

Contextual Info: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate

NTA4153NT1G

Abstract: NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

Contextual Info: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable

NTA4153NT1G

Abstract: NTA4153N NTA4153NT1 NTE4153N NTE4153NT1G
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

3055L

Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
Contextual Info: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve

Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

40V 60A MOSFET

Abstract: RFG60P05E TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

Contextual Info: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are

Contextual Info: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E rfg60p06 TA09836
Contextual Info: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits

3055L

Abstract: TA49158
Contextual Info: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives

LSI1013XT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V G-S MOSFET FEATURES TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns

Contextual Info: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes

rfg60p06

Contextual Info: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,

Si7703EDN

Abstract: 1600 v mosfet
Contextual Info: Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization