LSI1013XT1G Search Results
LSI1013XT1G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LSI1013XT1GContextual Info: LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V G-S MOSFET FEATURES TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns |
Original |
LSI1013XT1G S-LSI1013XT1G AEC-Q101 SC-89 463C-01 463C-02. LSI1013XT1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V G-S MOSFET LSI1013XT1G FEATURES D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns |
Original |
LSI1013XT1G SC-89 463C-01 463C-02. |