MOSFET A11 Search Results

J239

Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Contextual Info: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

2a11612

Abstract: 2S200
Contextual Info: CPH5870 Ordering number : ENA1161 SANYO Semiconductors DATA SHEET CPH5870 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

sc1142

Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

sc1142

Abstract: a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405B TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET

A1170

Abstract: ta 7045 EMH2402 2A11702 A117-04
Contextual Info: EMH2408 Ordering number : ENA1170 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

Contextual Info: EMH2408 Ordering number : ENA1170A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

A1170

Abstract: A117-04 2A11702 A11701
Contextual Info: EMH2408 Ordering number : ENA1170A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

2A11702

Contextual Info: EMH2408 Ordering number : ENA1170 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

sc1142

Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power

APL3542A

Contextual Info: APL3542A High-Side Power Distribution Controller General Description Features • APL3542A is a high-side power distribution controller for an external N-channel MOSFET, allow for +12V, +19V or High-Side Driver for an External N-Channel MOSFET • • •

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL

Contextual Info: Ordering number : ENA1170A EMH2408 N-Channel Power MOSFET http://onsemi.com 20V, 4A, 45mΩ, Dual EMH8 Features • • • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting

MRF6P21190H

Abstract: AN1955 JESD22 MRF6P21190HR6 A114 A115
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6P21190HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6P21190HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

MD1821

Abstract: mark vh MO-220 TC6320 Piezoelectric ultrasound Transducer
Contextual Info: Supertex inc. MD1821 High Speed, Four Channel MOSFET Driver with Inverting Outputs Features ► ► ► ► ► ► ► ► ► ► ► ► Inverting MOSFET driver 6.0ns rise and fall time 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible

MD1822

Abstract: MD1822K6-G MO-220 TC6320 PAY MARKING MOSFET A11011
Contextual Info: Supertex inc. MD1822 High Speed Four Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs Features ► ► ► ► ► ► ► ► ► ► ► ► Mixed inversion MOSFET driver 6.0ns rise and fall time 2.0A peak output source/sink current

APL3520A

Abstract: APL3520B APL3520C APL3520D Power Switch
Contextual Info: APL3520A/B/C/D USB Dual Power-Distribution Switches Features General Description • 70mΩ High Side MOSFET • Continuous Current The APL3520 series of power switches are designed for USB applications. The 70mΩ N-channel MOSFET power switch satisfies the voltage drop requirements of USB

APL3518G

Abstract: Power Switch L518B
Contextual Info: APL3518G USB Power-Distribution Switches General Description Features • • • • • • • • The APL3518G of power switches are designed for USB applications. The 62mΩ N-channel MOSFET power switch 62mΩ High Side MOSFET Wide Supply Voltage Range: 2.7V to 5.5V

APL3518A

Abstract: APL3518B APL3518C APL3519A APL3519B APL3519C Power Switch
Contextual Info: APL3518/9 USB Power-Distribution Switches General Description Features • • • • • • • • The APL3518/9 series of power switches are designed for USB applications. The 62mΩ N-channel MOSFET 62mΩ High Side MOSFET Wide Supply Voltage Range: 2.7V to 5.5V

MD1820

Abstract: logic pulser logic pulser specifications MO-220 TC2320 TC6320
Contextual Info: Supertex inc. MD1820 High Speed, Four Channel MOSFET Driver with Non-Inverting Outputs Features ► ► ► ► ► ► ► ► ► ► ► ► Non-inverting, four channel MOSFET driver 6.0ns rise and fall time 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible

MOSFET 600V 7A

Abstract: mosfet 600V 7A N-CHANNEL A11 MARKING TSM7N60 10SEC MOSFET A11 A11 MARKING CODE
Contextual Info: TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.