MOSFET 600V, 20A Search Results

w20nm

Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
Contextual Info: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω

W20NM60

Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
Contextual Info: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

w20nm60

Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
Contextual Info: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

w20nm60

Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
Contextual Info: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

20nm60

Abstract: W 20NM60 *b20nm6 STB20NM60-1
Contextual Info: STP20NM60 - STP20NM60FP STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET ADVANCED DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM60/FP 600V <0.29Ω 20 A STB20NM60-1 600V <0.29Ω 20 A TYPICAL RDS(on) = 0.25Ω

Mosfet

Abstract: SSF20N60H
Contextual Info: SSF20N60H 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.2ohm(typ.) ID 20A TO247 High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

mosfet 20n60

Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

mosfet 20n60

Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Mosfet

Abstract: SSF20NS60F
Contextual Info: SSF20NS60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO220F High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

20N60

Abstract: 20N60 mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

B20NM60D

Abstract: JESD97 STB20NM60D
Contextual Info: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge

Mosfet

Abstract: SSF20NS60
Contextual Info: SSF20NS60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Contextual Info: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

STW20NM60

Abstract: Mosfet 600V, 20A
Contextual Info: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

STW20NM60N

Abstract: STW20NM60
Contextual Info: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 n n n n n n VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source