MOSFET 600A 600V Search Results

N mosfet 250v 600A

Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Contextual Info: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?

N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •

IRGDDN600K06

Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Contextual Info: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

DOUBLE INT-A-PAK Package

Contextual Info: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

N mosfet 250v 600A

Contextual Info: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A

semikron snubber

Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
Contextual Info: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V

7272

Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Contextual Info: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Contextual Info: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages

Contextual Info: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)

APT94N60L2C3G

Contextual Info: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel)

Contextual Info: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

apt60dq60

Abstract: APT106N60B2C6
Contextual Info: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

APTM120U10SA

Contextual Info: APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

MOSFET circuit welding INVERTER

Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
Contextual Info: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES

AN-7528

Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
Contextual Info: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft

Contextual Info: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance

103A

Abstract: c 103 mosfet
Contextual Info: APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance

GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Contextual Info: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES

Contextual Info: APTM120U100S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ max @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

DS333

Contextual Info: APTM50AM38ST VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM50AM38STG VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.

DD2030

Abstract: diode 53a APT53N60BC6 APT53N60B
Contextual Info: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.