MOSFET 50V 30A Search Results

BUZ11

Abstract: buz11 application note BUZ1 TB334 TA9771
Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization

Contextual Info: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes

4134 mosfet

Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
Contextual Info: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.

TA9771

Abstract: BUZ11 TB334
Contextual Info: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N05 Power MOSFET 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

40V 60A MOSFET

Abstract: RFG60P05E TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

TA9771

Abstract: buz11
Contextual Info: intelai I BUZ11 Data S heet Ju n e 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET F ile N u m b e r 2253.2 Features • 30A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

60n05

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.

50V 60A MOSFET

Abstract: RFG60P05E 124E-12
Contextual Info: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model

RFG60P05E

Contextual Info: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve

BUZ11

Abstract: TB334
Contextual Info: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching

TA9771

Contextual Info: BUZ11 Semiconductor Data Sheet June 1999 30A, 50 V, 0.040 Ohm, N-Channel Power MOSFET File Number 2253.2 Features • 30A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

4 pin hall effect dC motor

Abstract: Hall Effect Current Measurements
Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER M.S.KENNEDY CORP. 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating

41A hall

Abstract: PID controller for temperature control with pwm
Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating

41a hall sensor

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating

41a hall sensor

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating

BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
Contextual Info: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Contextual Info: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

41a hall sensor

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 30 AMP, 50V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4365 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 50 Volt Maximum Operating Motor Supply Voltage 75 Volt Absolute Maximum Output Stage Rating