MOSFET 4953 Search Results

4953BDYSS

Abstract: 4953b TF23 MTDP4953BDYQ8
Contextual Info: CYStech Electronics Corp. Spec. No. : C401Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

4953ss

Abstract: MTDP4953Q8 sop8 Package dimension sop-8 582
Contextual Info: CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953Q8 Description The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

4953p

Abstract: max5390 mosfet 4953
Contextual Info: AF4953P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Si6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET

SI6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET

Contextual Info: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

mosfet 4953

Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
Contextual Info: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

Mosfet

Abstract: SSF4953
Contextual Info: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

4953P

Abstract: AF4953P mosfet 4953 SECT10
Contextual Info: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack

4953p

Abstract: AF4953P
Contextual Info: AF4953P Dual P-Channel 30-V D-S MOSFET „ Features „ General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack

APM4953

Abstract: PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet
Contextual Info: APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS ON = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package

Contextual Info: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low Gate Charge Fast Switching BVDSS D2 -30V RDS ON D2 D1 D1 53m ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the

4953ss

Abstract: ssg4953
Contextual Info: SSG4953 -6 A, -30 V, RDS ON 45 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and

4953A

Abstract: SSG4953 ssg4953a
Contextual Info: SSG4953A P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 42 m Elektronische Bauelemente DESCRIPTION The SSG4953A uses high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The SOP-8 package is universally preferred for all commercial-industrial surface mount

Contextual Info: _SÌ6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY Vd s OO R o s io n ) I 52) I d IA I 0.065 V G S = 10 V ± 3 .9 0.095 0 V g s = 4 . 5 V ± 3.1 30 d2 Dl o Q TSSOP-8 Di Œ Si E 3] d2 • S Ì6954 D O s, E

Contextual Info: _ SÌ4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET VD. (V) r d s <o n ] (Q ) lD (A) 0.037 @ V q s = 10 V ± 5 .8 0.055 @ V GS = 4.5 V ± 4 .7 30 u u D, SO-8 , A B S O L U T E M A X I M U M R A T I N G S ( T fl f, C U N L E S S O T H E R W I S E

mosfet 4953

Abstract: mosfet catalog
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Tabie of Contents General Inform ation . . 3 Index by Part Num ber . 4-9 MIL-PRF-19500 Qualified Products L is t.

SKiip 83 EC 125 T1

Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
Contextual Info: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen

toy helicopter remote control circuit diagram

Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power

Contextual Info: PULSE WIDTH MODULATION AMPLIFIER MSA240 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 2kW OUTPUT CAPABILITY • VARIABLE SWITCHING FREQUENCY

Contextual Info: MSA240 MSA240 MSA240 Pulse Width Modulation Amplifiers FEATURES DESCRIPTION The MSA240 is a surface mount constructed PWM amplifier that provides a cost effective solution in many industrial applications. The MSA240 offers outstanding performance that rivals many much more expensive hybrid components.

mosfet 4953

Abstract: circuit mri oscillator 98Vs
Contextual Info: MSA240 MSA240 MSA240 Pulse Width Modulation Amplifiers FEATURES DESCRIPTION The MSA240 is a surface mount constructed PWM amplifier that provides a cost effective solution in many industrial applications. The MSA240 offers outstanding performance that rivals many much more expensive hybrid components.

xc2765

Abstract: ECU ENGINE driver ignition coil Automatic Railway Gate Control system, ecu ems 3134 10w led driver SSC 9500 xc2320 EMS 3134 EPS ECU block diagram
Contextual Info: Scalable and Highly Integrated 16/32-bit Microcontrollers for Automotive Applications [ www.infineon.com/XC2000 ] 2 Contents XC2000 Family Overview 04 XC2200 for Body & Convenience 06 XC2300 for Safety 16 XC2700 for Powertrain 24 Enhanced Communication

Contextual Info: MSA240 MSA240 P r o dMSA240 u c t IInnnnoovvaa t i o n FFr roomm Pulse Width Modulation Amplifiers FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 2kW OUTPUT CAPABILITY • VARIABLE SWITCHING FREQUENCY APPLICATIONS