MOSFET 400V 26A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

N-channel MOSFET to-247

Abstract: 25N40 mosfet 400V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

FDP26N40

Abstract: FDPF26N40 MOSFET 400V
Contextual Info: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

MOSFET 400V 26a

Abstract: FDP26N40 MOSFET 400V TO-220 FDPF26N40
Contextual Info: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16Ω Features Description • RDS on = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A • Low gate charge ( Typ. 48nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

STW26NM50

Abstract: W26NM50 N-channel MOSFET to-247
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW26NM60

Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.135Ω 26 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.120Ω 26 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STU26NM50 N-CHANNEL 500V - 0.10Ω - 26A Max220 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.120Ω 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

W26NM50

Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

P011S

Contextual Info: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.135Ω < 0.135Ω 26 A 26 A TYPICAL RDS(on) = 0.0125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: STU26NM50 STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM50 STU26NM50I • ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 0.120Ω < 0.120Ω 26 A 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.120Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.140Ω < 0.140Ω 26 A 26 A TYPICAL RDS(on) = 0.120Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

W26NM50

Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
Contextual Info: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

26nm50

Abstract: MAX220 U26NM50
Contextual Info: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

diode schottky 1000V 10a

Abstract: SiC MOS APT0502
Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT26M100JCU2

Abstract: sic-diode 1000v APT0502 diode schottky 1000V 10a
Contextual Info: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

Contextual Info: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode

smps 450 W

Abstract: IRFPS43N50K
Contextual Info: PD- 93922 PROVISIONAL IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

2SK3680-01

Abstract: n-channel 250V power mosfet VDS50
Contextual Info: 2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators

2SK3680-01

Abstract: 2sk3680
Contextual Info: 2SK3680-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters