MOSFET 300 VOLT Search Results

Contextual Info: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097

Contextual Info: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330

Contextual Info: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097

SQM35N30-97

Contextual Info: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097

Contextual Info: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330

HF Amplifier 300w

Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
Contextual Info: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.

P7NK30Z

Abstract: STD7NK30Z STF7NK30Z STP7NK30Z p7nk
Contextual Info: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω

Contextual Info: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω

P7NK30Z

Contextual Info: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω

300w class ab amplifier

Abstract: 300w amplifier 10-degrees 300w power amplifier
Contextual Info: IS 300-1050 Distribuited by Richardson Electronics, Ltd 300 W Amplifier Designed for industrial bands, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 10 ÷ 50 MHz 50 Volts

fdd10n20

Contextual Info: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Features Description • RDS on = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Features Description • RDS on = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 m Features Description • RDS on = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

TESTO10

Contextual Info: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

Contextual Info: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 mΩ Features Description • RDS on = 240 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDA59N30

Contextual Info: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

fdb14n30

Contextual Info: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 m Features Description • RDS on = 108 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to