MOSFET 250V 10A Search Results

1E14

Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

1E14

Abstract: 2E12 FSL234R4 JANSR2N7397
Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: RCX100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

RCX100N25

Contextual Info: RCX100N25 RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

12SW

Contextual Info: RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

FS10UM5

Abstract: FS10UM-5 08GS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 • V d s s . 250V • ros ON (MAX) . 0.52Í2 • Id . 10A

Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: STRH10N25ESY3
Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

C08N25

Abstract: RCD080N25 sot428
Contextual Info: RCD080N25 Nch 250V 8A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE FK20UM-5 • VDSS . 250V • rDS ON (MAX) . 0 .2 4 Î2 • Id . 20A

C08N25

Contextual Info: RCD080N25 Nch 250V 8A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

IRF 810

Abstract: AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer
Contextual Info: PD - 94296 IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

AN1001

Abstract: IRFR120 IRFR12N25D IRFU120 IRFU12N25D
Contextual Info: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

FS10KM5

Abstract: FS10kM-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm • V dss .250V • rDS ON (MAX) . 0 .5 2 Í2

IRHQ3214

Abstract: IRHQ4214 IRHQ7214 IRHQ8214
Contextual Info: PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 250V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) RDS(on) 2.25Ω 2.25Ω ID

1E14

Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event