MOSFET 250V Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

N mosfet 250v 600A

Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Contextual Info: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?

N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •

Contextual Info: 18N25 UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 18A, 250V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-220F The UTC 18N25 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

MOSFET Modules

Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Contextual Info: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

SPM6M080-010D

Abstract: SPM6M060-025D 010D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

SPM6M080-010D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N25Z Preliminary Power MOSFET 3.8A, 250V N-CHANNEL MOSFET  DESCRIPTION The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N25V Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N25V is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

FDD8N50NZ

Abstract: FDD8N50 FDD8N50NZTM
Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and

33n25

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 33N25 Preliminary Power MOSFET 33A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UFP264 Power MOSFET 38A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UFP264 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N25 Preliminary Power MOSFET 3.8A, 250V LOGIC N-CHANNEL MOSFET  DESCRIPTION The UTC 5N25 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can

Contextual Info: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

fdd7n25

Abstract: fdd7n25lz
Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

IRFM460

Contextual Info: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The