MOSFET 1980 Search Results

Contextual Info: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8  Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and

Contextual Info: FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ Features Description • RDS on = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS

200B

Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

transistor rf m 1104

Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

MOSFET 1300 F2

Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

Contextual Info: MOTOROLA Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930

TH 2190 Transistor

Contextual Info: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from

AN-1005

Contextual Info: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

mosfet VDS 30V ID 18A TO 252

Abstract: AN-1005
Contextual Info: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V

APT0502

Contextual Info: APTML50UM90R020T1AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

APT0502

Contextual Info: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

Contextual Info: APTML602U12R020T3AG VDSS = 600V RDSon = 125m typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features      Linear MOSFET Very low stray inductance

Contextual Info: APTML502UM90R020T3AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

Contextual Info: APTML102UM09R004T3AG VDSS = 100V RDSon = 09m typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features      Linear MOSFET Very low stray inductance

depletion MOSFET SPICE

Abstract: depletion MOSFET IRFZ20 Theory of Modern Electronic Semiconductor Device subcircuit with power switch new cosmos NMOS MODEL PARAMETERS SPICE
Contextual Info: APPLICATION NOTE A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL by M. Melito, F. Portuese ABSTRACT The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power

thermistor R55

Abstract: APT0502 mosfet 10a 800v high power sensor ptc
Contextual Info: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

APT9903

Abstract: RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A
Contextual Info: APPLICATION NOTE By: APT9903 Richard Frey, P.E. 500W, CLASS E 27.12 MHz AMPLIFIER USING A SINGLE PLASTIC MOSFET 1 APT9903 500W, Class E 27.12 MHz Amplifier Using A Single Plastic MOSFET Richard Frey, P.E. Advanced Power Technology, Inc. Bend, Oregon 97702 USA

Contextual Info: APTML102UM09R004T3AG VDSS = 100V RDSon = 09mΩ typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

Contextual Info: APTML60U12R020T1AG VDSS = 600V RDSon = 125mΩ typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

25c2625

Abstract: MHW1910 MHW1910-1 mos 4801
Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ

APT0502

Contextual Info: APTML502UM90R020T3AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

Contextual Info: APTML50UM90R020T1AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance