301AW Search Results

Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage

Motorola 666

Abstract: MHW1910 MHW1910-1 1800 ldmos
Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage

Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1810-1 MHW1810-2 PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit

MHW1810

Abstract: MHW1810-1 MHW1810-2
Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit

25c2625

Abstract: MHW1910 MHW1910-1 mos 4801
Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ

pl 431

Contextual Info: –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F IS FROM THE BOTTOM OF HEATSINK TO THE TOP OF THE LEAD. 4. DIMENSION P TO BE MEASURED AS LEAD EXITS COVER. 5. FLANGE FLATNESS 0.038 0.0015 MAXIMUM

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Contextual Info: MOTOROLA O rder this docum ent by M HW 1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect A m plifier N-Channel Enhancement-Mode Lateral MOSFET • Specified 26 Volts, 1930-1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

EB202

Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
Contextual Info: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF

MHW1810

Abstract: MHW1810-1 MHW1810-2
Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts MHW1810–1

25c2625

Abstract: MHW1910-1 1181BSC Motorola 666 MHW1910
Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts

25C2625

Abstract: MHW1810 MHW1810-1 MHW1810-2 mos 4801
Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF MOSFET Line RF Power Field Effect Amplifiers N–Channel Enhancement–Mode Lateral MOSFETs • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics

MHW6181

Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Contextual Info: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1

Motorola transistors MRF646

Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
Contextual Info: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

motorola MHW

Contextual Info: MOTOROLA O rder this docum ent by M HW 1810/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M H W 1810-1 M H W 1810-2 RF P o w e r F ield E ffe c t A m p lifie rs N-Channel Enhancement-Mode Lateral MOSFETs • Specified 26 Volts, 1805-1880 MHz, Class AB Characteristics