MOSFET 168 Search Results

Contextual Info: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides

AN799 Matching MOSFET Drivers to MOSFETs

Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Contextual Info: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of

Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

FDD4N60NZ

Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

Contextual Info: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

irf 520

Abstract: IRFH7928TRPBF
Contextual Info: PD -96209 Preliminary IRFH7928PbF Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET Power MOSFET VDSS 30V RDS on max Qg 2.9m @VGS = 10V 40nC : Benefits

mosfet 4702

Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZ2210N50L

Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

VEC2803

Contextual Info: VEC2803 Ordering number : ENN8202 VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

VEC2602

Contextual Info: VEC2602 Ordering number : ENN8021 N-Channel Silicon MOSFET VEC2602 General-Purpose Switching Device Applications Features • • • • Best suited for inverter applications. The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

Mosfet

Abstract: SSF3036C
Contextual Info: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits   Advanced Process Technology

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.

Matching MOSFET Drivers to MOSFETs

Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
Contextual Info: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being

fqpf7n80c

Abstract: FQP7N80C
Contextual Info: FQP7N80C / FQPF7N80C N-Channel QFET MOSFET 800 V, 6.6 A, 1.9 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce