MOSFET 1200V 30A SMPS Search Results

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

mosfet 1200V 40A

Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
Contextual Info: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA

Contextual Info: ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 18 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant

MOSFET 1200v 30a

Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
Contextual Info: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:

Contextual Info: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical

MOSFET 1200v 30a snubber circuit

Abstract: MOSFET 1200v 30a r30120g2 AN-7528 R30120G ISL9R30120G2 smart ups 750 circuit
Contextual Info: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical

K30120G3

Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
Contextual Info: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

r18120g2

Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

Quasi-resonant Converter for induction cooker

Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
Contextual Info: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC

K18120G3

Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

r18120g2

Abstract: R18120P2 AN-7528 TA49414 MOSFET 1200v 30a ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S R18120S3
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

K18120G3

Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

MOSFET 1200v 30a snubber circuit

Abstract: R18120P2 AN-7528 ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S r18120g2 igbt 6.5 kv snubber
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

LCD TV SMPS circuit

Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Contextual Info: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient

MOSFET 1200v 30a

Abstract: DIODE w2x MOSFET 1200v 30a snubber circuit STTB6006TV2
Contextual Info: f Z J SGS-THOMSON ^7# [ « [ im iO T ® « ! STTB6006T V 1/2 TURBOSWITCH “B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 2*30A V rrm 600V trr (typ) 60ns V f (max) 23 SB K2 A2 K1 A1 STTB6006T(V)1 1.3V A2 K1 K2 A1 STTB6006T(V)2

STTB3006P

Abstract: mosfet 1200V 30a smps
Contextual Info: T S G S -T H O M S O N ^ 7 # M C ^ < m iO T s M K fZ S T T B 3 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V tr r Vf PRELIMINARY DATA FEATURES AND BENEFITS

STTB3006P

Abstract: 3006P MOSFET 1200v 30a STTB3006PI MOSFET 1200v 30a snubber circuit
Contextual Info: STTB3006P I  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 60ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization

diode sg 42

Contextual Info: £ ÿ j SGS-THOMSON DœSELIOTfô ! STTB3006P I TURBOSWITCH ™ ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

Contextual Info: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1

STTB6006TV1

Abstract: STTB6006TV2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE smps high power
Contextual Info: STTB6006TV1/2  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF AV 2*30A VRRM 600V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTB6006TV1 1.3V A2 K1 K2 A1 STTB6006TV2 FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization

Contextual Info: rz 7 Ä 7# SGS-THOMSON M ûœ ËŒ O T «® S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V trr PRELIMINARY DATA 60ns (typ) 1.3V Vf (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

Contextual Info: £ y j SGS-THOMSON ne^OHLieiTIMeQilBCi S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPEC IFIC TO THE FOLLOWING OPERA­

IGBT 500V 35A

Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
Contextual Info: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?