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    FLIP ELECTRONICS ISL9R30120G2

    DIODE AVALANCHE 1200V 30A TO2472
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    DigiKey ISL9R30120G2 Tube 300
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    onsemi ISL9R30120G2

    DIODE AVALANCHE 1200V 30A TO2472
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    Bristol Electronics ISL9R30120G2 281
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    Avnet Silica ISL9R30120G2 13 Weeks 450
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    Chip Stock ISL9R30120G2 1,125
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    Flip Electronics ISL9R30120G2 1,307
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    Fairchild Semiconductor Corporation ISL9R30120G2

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    Bristol Electronics () ISL9R30120G2 450
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    ISL9R30120G2 42
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    Vishay Intertechnologies ISL9R30120G2

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    Bristol Electronics ISL9R30120G2 5
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    R30120G2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    R30120G2

    Abstract: AN-7528
    Contextual Info: R30120G2 tm Features 30 A, 1200 V, Stealth Diode • Stealth Recovery trr = 269 ns @ IF = 30 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability The R30120G2 is a Stealth™ diode optimized for low loss


    Original     		ISL9R30120G2 ISL9R30120G2 R30120G2 AN-7528 PDF

    MOSFET 1200v 30a snubber circuit

    Abstract: MOSFET 1200v 30a r30120g2 AN-7528 R30120G ISL9R30120G2 smart ups 750 circuit
    Contextual Info: R30120G2 30A, 1200V Stealth Diode General Description Features The R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical


    Original     		ISL9R30120G2 ISL9R30120G2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a r30120g2 AN-7528 R30120G smart ups 750 circuit PDF

    Contextual Info: R30120G2 30 A, 1200 V STEALTH Diode Features Description • Stealth Recovery trr = 269 ns @ IF = 30 A The R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse


    Original     		ISL9R30120G2 ISL9R30120G2 PDF

    Contextual Info: R30120G2 30A, 1200V Stealth Diode General Description Features The R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical


    Original     		ISL9R30120G2 ISL9R30120G2 120lopment. PDF

    Contextual Info: R30120G2 30 A, 1200 V STEALTH Diode Features Description • Stealth Recovery trr = 269 ns @ IF = 30 A The R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse


    Original     		ISL9R30120G2 ISL9R30120G2 PDF