MOSFET .5A 100V Search Results

STP6NB25

Abstract: STP6NB25FP
Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 5A STP6NB25FP 250 V < 1.1 Ω 5A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100FP

Abstract: STP5NB100
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STD5NE10

Contextual Info: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 • ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED

2E12

Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

STP5NK65Z

Abstract: L9 Zener P5NK65Z
Contextual Info: STP5NK65Z N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP5NK65Z • ■ ■ ■ ■ ■ ■ VDSS R DS on ID Pw 650 V < 1.8 Ω 5A 85 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

AOT5N50

Abstract: AOTF5N50
Contextual Info: AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOT5N50

Abstract: AOTF5N50
Contextual Info: AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

STD6NC40

Contextual Info: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: AP09T10GH-HF Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Chage Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 100V 300m 5A S Description Advanced

STD5NE10L

Contextual Info: STD5NE10L N - CHANNEL 100V - 0.3 n - 5A - DPAK/IPAK _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5N E10L V dss R dS oii Id 100 V < 0 .4 Q. 5 A • . . . . TYPICAL RDS(on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

FDPF7N50U

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

STD5NE10L

Contextual Info: STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY

FDPF5N50T

Abstract: MOSFET 500V 5A
Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

APT4M120K

Abstract: MIC4452
Contextual Info: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: 001 PWR-82341 ILC DATA DEVICE CORPORATION _ _ JT" SMART POWER H-BRIDGE MOTOR DRIVE DESCRIPTION APPLICATIONS The PWR-82341 is a sm art Power H-Bridge Motor Drive hybrid. The PWR-82341 uses a MOSFET output stage with a 100Vdc rating, and can deliver 5A continuous, 10 A peak cur­

Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTK5N250 IXTX5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

FQB5N50CF

Abstract: FQB5N50CFTF FQB5N50CFTM
Contextual Info: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

id 0835

Abstract: STW8NB90 STH8NB90FI
Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: LTC3813 100V Current Mode Synchronous Step-Up Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION High Output Voltages: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive ±0.5% 0.8V Voltage Reference

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE FS5UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡2.5V DRIVE ¡VDSS . 100V

40A 48v charger Schematic Diagram

Abstract: LT3812-5 LTC3810 MBR1100 Si7456DP ZXMN10A07F lt381 REG IC 48V 5V 18V 10A OUT Nippon capacitors
Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3810 uses a constant on-time