MOSFET .5A 100V Search Results

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

FS12UMA-5A

Abstract: 8618A
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS12UMA-5A FS12UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS12UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6

FS20UMA-5A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS20UMA-5A FS20UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6

FS16UMA-5A

Abstract: 16A00
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS16UMA-5A FS16UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS16UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6

FS10UMA-5A

Abstract: 250v 10A mosfet power mosfet 5a 20v
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10UMA-5A FS10UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6

FS16KMA-5A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS16KMA-5A FS16KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS16KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS20KMA-5A

Abstract: fs20kma
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS20KMA-5A FS20KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING

FS10KMA-5A

Abstract: mosfet vgs 5v 5a
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KMA-5A FS10KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS10UMA-5A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS10UMA-5A FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING

FS12KMA-5A

Abstract: FS12KM
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS12KMA-5A FS12KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS12KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

1.5A 150V power mosfet

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KMA-5A FS3KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

Contextual Info: STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) 550V <0.78Ω STD7NM50N ID 3 5A 1 STD7NM50N-1 550V <0.78Ω 5A STF7NM50N

P7NM50N

Abstract: STP7NM50N dpak mosfet st 220 f1 JESD97 STD7NM50N STD7NM50N-1 STF7NM50N F7NM50N d7nm50n
Contextual Info: STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD7NM50N 550V <0.78Ω 3 5A 1 STD7NM50N-1 550V <0.78Ω 5A

schematic diagram UPS 600 Power free

Abstract: schematic diagram UPS ST UPS design STP6NB25 STP6NB25FP
Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 5A STP6NB25FP 250 V < 1.1 Ω 5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP6NB25

Abstract: STP6NB25FP
Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 5A STP6NB25FP 250 V < 1.1 Ω 5A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100FP

Abstract: STP5NB100
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STD5NE10

Contextual Info: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

STP5NB100

Abstract: STP5NB100FP
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

l9130h

Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event