MOS1 Search Results

270v varistor d - 302

Abstract: MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A
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UBQJOHT MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1 SPR2 SPR2 SPR3 SPR3 SPR3 LT1/6 LT1/6 LT1/4 LT1/4 RF16 RF16

2SK2228

Contextual Info: TOSHIBA 2SK2228 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOS1V 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 APPLICATIONS. 4V GATE DRIVE

IXGH20N50

Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
Contextual Info: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_

reliability data

Abstract: MOS13 XPC7410 XPC7410RX
Contextual Info: M XPC7410RX RELIABILITY DATA SUMMARY XPC7410 Fab: Mask: Process: Package: Assy: - Nitro - Information MOS13, Austin, TX K65D HiP6L 25 x 25 mm CBGA, 360 Pin BAT-1, Austin, Tx XPC7410 - Nitro - TECHNOLOGY: MOS13 on the 0.15µm Nominal HiP6L process DYNAMIC LIFETEST (2.35V, 90°C)

R07DS0904EJ0120

Abstract: RJK03P0DPA
Contextual Info: Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 25 A, 7.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0904EJ0120 Rev.1.20 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

Contextual Info: HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-525 C 4th. Edition Features • • • • Low on-resistance Capable o f 2.5 V gate drive Low drive current High density mounting Outline SOP-8 78 5 6 ò ô MOS1 MOS2 S1 S3

HAT1024R

Abstract: MS-012AA silicon P channel MOS FET J 350
Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 7 8 5 6 1 .3 S ource 2 .4 G ate 5, 6 , 7, 8 Drain MOS1 M O S2

MB8116E

Abstract: mb8116
Contextual Info: FU JITSU MICROELECTRONICS MOS16,384-BIT DYNAMIC RANDOM ACCESS MEMORY MB8116E M M 11AH DESCRIPTION The Fujitsu MB8116 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for high speed, high performance applications such

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D 5 6 D D Î-Î Î-Î ó S1 MOS1 ó s3 MOS2 1.3

67e4

Abstract: MPC107 Reliability Summary voltage acceleration 67E-3 MOS13 RELIABILITY DATA 42e4
Contextual Info: m XPC107A RELIABILITY DATA SUMMARY XPC107A - Chaparral - Information Fab: MOS13, Austin, TX Mask: J82X Process: HiP3 Package: 503 pin, FC-PBGA, Flip Chip on Organic Assy: BAT-1, Austin, Texas MPC107- TECHNOLOGY: MOS13 on the 0.29µm HiP3 process DYNAMIC LIFETEST 3.3V, 125°C

Contextual Info: Preliminary Datasheet RJK03P6DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 45 A, 2.4 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0905EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

HAT1110R

Abstract: HAT1110R-EL-E P Channel Power MOS FET Power Switching
Contextual Info: HAT1110R Silicon P Channel Power MOS FET Power Switching REJ03G0416-0200 Rev.2.00 Oct.07.2004 Features • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 2 G 5 6 D D 4 G 8 5 7 6 3 1 2 S1 S3 MOS1 MOS2 4

2SJ312

Contextual Info: TO SHIBA 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOS1V 2SJ312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in m m TO-22QFL

Contextual Info: HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 7 8 5 6 1 .3 Source 2 .4 Gate 5, 6, 7, 8 Drain MOS1 MOS2

Contextual Info: HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-471 C 4th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 7 8 5 6 D D D D ô ò S1 MOS1

Contextual Info: HAT2028R Silicon N-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-524E 6th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 7 8 ò S1 MOS1 5 6 ò S3 1 .3 Source

RJK03P7DPA

Contextual Info: Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

RJK03P9DPA

Contextual Info: Preliminary Datasheet RJK03P9DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0907EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

MP6801

Contextual Info: TOSHIBA MP6801 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M P6801 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Unit in mm 31.51-0.2 • •

270v varistor d - 302

Abstract: 270v varistor d 302 LT1/6CT26 KOA RKL MOSX3CL25A
Contextual Info: Appendix C packaging - leaded components axial tapings Straight Type Name appendix & add. information MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS2 MOS3 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1

Contextual Info: HAT1110R Silicon P Channel Power MOS FET Power Switching REJ03G0416-0200 Rev.2.00 Oct.07.2004 Features • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 2 G 5 6 D D 4 G 8 5 7 6 3 1 2 S1 S3 MOS1 MOS2 4

Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-476 G 8th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 7 8 D D ts ô S1 MOS1 5 6 D D

XPC850DEZT80BU

Abstract: D677 XPC850 XPC850DEZT50BU XPC850DEZT66BU XPC850SRZT50BU XPC850ZT50BU XPC850ZT66BU XPC850ZT80BU SPB32
Contextual Info: Freescale Semiconductor, Inc. Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: XPC850 XC Qualification in MOS12 Freescale Semiconductor, Inc. Motorola is pleased to announce an additional wafer fabrication facility, MOS12, for the XPC850

Contextual Info: HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D Î-Î ó S1 MOS1 5 6 D D Î-Î ó s3 MOS2 1 .3