R07DS0906EJ0110 Search Results
R07DS0906EJ0110 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RJK03P7DPAContextual Info: Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.1.10 Nov 01, 2012 Features • Low on-resistance Capable of 4.5 V gate drive |
Original |
RJK03P7DPA R07DS0906EJ0110 PWSN0008DD-B RJK03P7DPA |