MOS-FET 200 AMPERE Search Results

PFA113A

Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Contextual Info: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the

NEC 2561A

Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Contextual Info: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

opto coupler 2561A

Abstract: NEC 2501 Opto coupler NEC 2581A NEC 2561A nl701 nec 2501 PS2501-1-L varistor BS415 MATSUSHITA compressor codes 2501 PHOTOCOUPLER
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Data Sheet FIAM Filter Input Attenuator Module Features • • • • • • • • TM RoHS Compliant with F or G pin style EMI filtering-Class B(1) Transient protection Low profile mounting options 10 and 20 Ampere versions UL, CSA, EN compliance Mini-size package

30234-120

Contextual Info: Data Sheet FIAM Filter Input Attenuator Module Features • • • • • • • • TM RoHS Compliant with F or G pin style EMI filtering-Class B(1) Transient protection Low profile mounting options 10 and 20 Ampere versions UL, CSA, EN compliance Mini-size package

30234-120

Abstract: 6x fet transorb markings
Contextual Info: Data Sheet FIAM Filter Input Attenuator Module Features • • • • • • • • TM RoHS Compliant with F or G pin style EMI filtering-Class B Transient protection Low profile mounting options 10 and 20 Ampere versions UL, CSA, EN compliance Mini-size package

Contextual Info: Data Sheet FIAM Filter Input Attenuator Module Features • • • • • • • • TM RoHS Compliant with F or G pin style EMI filtering-Class B Transient protection Low profile mounting options 10 and 20 Ampere versions UL, CSA, EN compliance Mini-size package

sch448

Contextual Info: Data Sheet FIAM Filter Input Attenuator Module Features • • • • • • • • TM RoHS Compliant with F or G pin style EMI filtering-Class B(1) Transient protection Low profile mounting options 10 and 20 Ampere versions UL, CSA, EN compliance Mini-size package

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

2N7002SESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002SESGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 Ampere APPLICATION * Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems.

IRF712

Abstract: IRF713 TC-26 260FA
Contextual Info: IRF712,713 r a n r 1.3 AMPERES 400, 350 VOLTS RDS ON = 5 n HELD EFFECT POWER TRANSISTOR This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

IRFP350

Abstract: D88FQ2 TRANSISTOR A06
Contextual Info: IRFP350,351 D88FQ2.Q1 [MET FIELD EFFECT POWER TRANSISTOR 15 AMPERES 400, 350 VOLTS RPS ON = 0-3 n This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er MOSFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­

SOW-20

Abstract: TN0604 TN0604WG
Contextual Info: TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max 40V Order Number / Package SOW-20* 1.0Ω TN0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology 4 independent channels

SOW-20

Abstract: TN0604WG FAST DMOS FET Switches s2615
Contextual Info: TN0604WG Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS Order Number / Package RDS ON Max 40V SOW-20* 1.0Ω TN0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology 4 independent channels

SOW-20

Abstract: TP0604 TP0604WG
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SOW-20

Abstract: TP0604 TP0604WG
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SOW-20

Abstract: TP0604WG
Contextual Info: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SOW-20

Abstract: TN0604WG TN0604 FAST DMOS FET Switches
Contextual Info: TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max 40V Order Number / Package SOW-20* 1.0Ω TN0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology 4 independent channels

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

2N7002VPT

Abstract: SOT-563 MOS
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002VPT SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-563 FEATURE * Small surface mounting type. SOT-563

2N7002VGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002VGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563

SOW-20

Abstract: TP0604WG
Contextual Info: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology ❏ 4 independent channels