MOROCCO P3 Search Results

P31 SOT223

Abstract: BSP31 BSP33 BSP41 BSP43 transistors sot-223
Contextual Info: BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE

transistor P39

Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s

p30ne06

Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
Contextual Info: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω

P3NB80

Abstract: P3NB80FP STP3NB80 STP3NB80FP 06-50NS
Contextual Info: STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P3NB80 ST P3NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A(ùù) TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP36NE06

Abstract: p36ne06fp P36NE06 p36ne06f p36ne morocco p36ne06fp 14A144 IDO24 p36ne0 STripFET
Contextual Info: STP36NE06 STP36NE06FP  N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID ST P36NE06 ST P36NE06FP 60 V 60 V < 0.040 Ω < 0.040 Ω 36 A 20 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

D1274

Contextual Info: SGS-THOMSON S D 1 2 7 4 -0 1 id ig ra o M i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • 160 MHz . 13.6 VOLTS ■ COMMON EMITTER ■ P o u t = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

Contextual Info: Æ T SGS-THOMSON noœiiuioTi^oifflnei STTB306B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 3A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

p368

Abstract: LIS3LV02DQ morocco p3 LE25 STEVAL-IFS001V1 LIS3LV02
Contextual Info: STEVAL-IFS001V1 3 axis MEMS accelerometer demo Data Brief Features • 3-axis acceleration measurement ■ ±2g/±6g user selectable full-scale ■ Data storage up to 256 Kbytes in the µPSD ■ PC connection via USB ■ Graphical user interface Description

SC89-3L

Abstract: ESDALC6V1P3 SC-89-3L 1E02
Contextual Info: ESDALC6V1P3 ASD Application Specific Devices DUAL LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : 3 Computers Printers • Communication systems and cellular phones

Contextual Info: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1

STM1404

Abstract: FIPS-140 JP13 STM1403 Supervisory automotive ST
Contextual Info: STEVAL-IPA001V1 Anti tamper and security kit based on STM1403 - STM1404 + uPSD3422EV Data Brief Features • Control of all voltage inputs of the STM140x PWM ■ Monitor of all voltage outputs of the STM140x ■ Monitor of all digital outputs of the STM140x

DIODE P1

Abstract: P4 transistor STTA3006CW diode tURBOSWITCH morocco p3 transistor TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Contextual Info: STTA3006CW  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODES PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS 2 x 15A IF AV 1 VRRM 600V 2 3 trr (typ) 35ns VF (max) 1.6V FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.

aba diode

Contextual Info: /IT SGS-THOMSON ^ 7 # IR L IÈ T I® « ® S TTB 106U TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 1A V rrm 600V trr (typ) 45ns Vf PRELIMINARY DATASHEET 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

HCF4007UBE

Abstract: HCF4007UBEY HCF4007UB HCF4007UBM1 HCF4007UM013TR
Contextual Info: HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER • ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns Typ. AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT

PD84006L-E

Abstract: JESD97 J-STD-020B
Contextual Info: PD84006L-E RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6W with 13dB gain @ 860MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

STEVAL-IFS001V1

Abstract: P368 LIS3LV02D MEMS read-out
Contextual Info: STEVAL-IFS001V1 3-axis MEMS accelerometer demonstration kit Data Brief Features • Allows 3-axis acceleration measurement ■ ±2 g / ±6 g user selectable full-scale ■ Data storage up to 256 KB in the µPSD ■ PC connection via USB ■ Graphical user interface

CQFP64

Abstract: PQFP64 ST92163 ST92E163 ST92T163 315KB
Contextual Info: ST92163 R 8/16-BIT HIGH SPEED USB MCUs WITH 16K ROM, 2K RAM, 8 USB FUNCTIONS, I2C, SCI, MFT & WDT TIMER, BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ USB interface compliant with USB specifications version 1.0 having the following

HCF4007UB

Abstract: HCF4007UBEY HCF4007UBM1 HCF4007UM013TR
Contextual Info: HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER • ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns Typ. AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT

Contextual Info: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1

HAND DRYER CIRCUIT DIAGRAM

Abstract: motion sensor free schematic diagram IR SENSOR HAND DRYER CIRCUIT T1235H-6T ACS108 "Humidity Sensor" fan triac CFL lamp control circuit diagram humidity sensor Infrared-Sensor
Contextual Info: STEVAL-IHT004V1 AC timer demonstration board on HT triacs and ST7Lite1b Data brief Features • 3 independent application programs – Hand dryer with infrared sensor and T1235H-6T switch – Bathroom fan with humidity sensor and ACS108 switch – Multi-entrance room controller with push

Contextual Info: STTA306B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 3 I f a v 600 V V rrm trr 20 ns (typ) V f (max) A 1.65 V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWH EEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST, AND SOFT RECOVERY

STAP85050

Contextual Info: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package

TDA8176

Abstract: P1 100K 1N4001
Contextual Info: TDA8176 TV VERTICAL DEFLECTION SYSTEM FOR TV AND MONITORS . . . SYNCHRONIZATION CIRCUIT OSCILLATOR AND RAMP GENERATOR HIGH POWER GAIN AMPLIFIER FLYBACK GENERATOR VOLTAGE REGULATOR MULTIWATT 15 Plastic Package DESCRIPTION The TDA8176 is a monolithic integrated circuit in