MONOLITHIC AMPLIFIER Search Results

pin diagram of op-amp ic 741

Abstract: IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011
Contextual Info: W TELEDYNE COMPONENTS TC901 MONOLITHIC, AUTO-ZEROED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • The TC901 is a monolithic, auto-zeroed operational amplifier. It is a second-generation design of the TC91X series, the world's first monolithic, CMOS chopper-stabi­

AN0005

Abstract: CHA5390TBF RO4003 PCB Rogers RO4003 substrate microwave IC 24-30GHz
Contextual Info: CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

AN0005

Abstract: CHA2066RBF RO4003
Contextual Info: CHA2066RBF 10-16GHz Self biased Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 10-16GHz

PCB Rogers RO4003

Abstract: AN0005 CHA2098RBF RO4003 VD35
Contextual Info: CHA2098RBF 20-33GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications,

AN0005

Abstract: 6 PIN SMD CHIP smd 493
Contextual Info: CHA2098aRBF 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications,

TA75S55

Abstract: TA75S01F TA75S558F
Contextual Info: TOSHIBA TA75S558F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75S558F DUAL OPERATIONAL AMPLIFIER TA75S558F is a low-noise monolithic precision operational amplifier. FEATURES • Internal Frequency Compensation Type. • Pin Compatible with TA75S01F.

op07 oscillator

Abstract: 911a
Contextual Info: Semiconductor, Inc. TC911A TC911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and

D marking amplifier

Abstract: smd rf transistor marking TSDF52424X TSDF52424XR TRANSISTOR SMD MARKING g1 18 sot-363 rf power amplifier sot-363 Marking G1
Contextual Info: TSDF52424X/TSDF52424XR Vishay Telefunken Dual - MOSMIC – MOS Monolithic Integrated Circuit Two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.

OPT211

Abstract: 650NM photodiode photodiode 650nm nep photodiode amplifier AB-061 2N5116 650NM photodiode 40 kilohertz AB-034 ultraviolet sensor OPT211P
Contextual Info: OPT211 MONOLITHIC PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH, HIGH RESPONSIVITY: The OPT211 is a monolithic photodiode with on-chip FET-input transpedance amplifier, that provides wide bandwidth at very high gains. Uncommitted input and

LF158A

Abstract: LF158 lf157h 12 volt dc to 220 volt ac inverter SCHEMATIC LF356BM LF356N ST LF155A
Contextual Info: LF155/LF156/LF157 gg National 4LM Semiconductor LF155/LF156/LF157 Series Monolithic JFET Input Operational Amplifiers General Description These are the first monolithic JFET Input operational ampli­ fiers to Incorporate well matched, high voltage JFETs on the

CHA2296

Abstract: 204 9129
Contextual Info: CHA2296 9- 19GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description OUT 1 The CHA2296 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication

uPC1655C

Abstract: uPC1655 uPC165
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1655C SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION CONNECTION DIAGRAM Top View The µPC1655C is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band

35-Volt

Contextual Info: CHA4092 20-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

staircase generator

Abstract: LF198QML
Contextual Info: LF198QML LF198QML Monolithic Sample-and-Hold Circuits Literature Number: SNOSAH9 LF198QML Monolithic Sample-and-Hold Circuits General Description Features The LF198 is a monolithic sample-and-hold circuit which utilizes BI-FET technology to obtain ultra-high dc accuracy

Contextual Info: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The

monolithic amplifier MAR

Abstract: ADS2001 ERA-5-ED9351 current amplifier note darlington HP54835A monolithic amplifiers
Contextual Info: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model

Contextual Info: AH5010,AH5011,AH5012 AH5010/AH5011/AH5012 Monolithic Analog Current Switches Literature Number: SNOSBH8A AH5010 AH5011 AH5012 Monolithic Analog Current Switches Y General Description Y A versatile family of monolithic JFET analog switches economically fulfills a wide variety of multiplexing and analog

Contextual Info: LF198,LF198A,LF298,LF398,LF398A LF198/LF298/LF398, LF198A/LF398A Monolithic Sample-and-Hold Circuits Literature Number: SNOSBI3A LF198/LF298/LF398, LF198A/LF398A Monolithic Sample-and-Hold Circuits General Description Features The LF198/LF298/LF398 are monolithic sample-and-hold

db9 dimensions

Abstract: tds avr SCHEMATIC circuit diagram
Contextual Info: CS5032 Semiconductor Corporation 12-Bit, 500 kHz, Sampling A/D Converters Features General Description The CS5032 is a complete monolithic CMOS analog- • Monolithic CMOS A/D Converter 0.4 xs Track/Hold Amplifier 1.6ms A/D Converter 2.5V Voltage Reference

CLC406

Abstract: CLC414 CLC415 CLC415AJE CLC415AJP
Contextual Info: CLC415 Quad, Wideband Monolithic Op Amp General Description Features The CLC415 is a wideband, quad, monolithic operational amplifier designed for intermediate gain applications where power and cost per channel of are primary concern. Benefiting from National’s current feedback architecture, the

CHA5295

Contextual Info: CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC Vd1 Vd2 Description Vg3 Vd3 The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication

Dielectric Resonator Oscillator DRO

Abstract: CHV2241 DRD036EC016 Substrate alumina
Contextual Info: CHV2241 K-band Oscillator with integrated Q-band Harmonic Mixer GaAs Monolithic Microwave IC Description The CHV2241 is a monolithic multifunction proposed for frequency generation and transposition. It integrates a K-band oscillator, a Q-band harmonic mixer and buffer amplifiers.

Si4300

Contextual Info: Si4300 Dual-Band Monolithic Power Amplifier System Description Features The Si4300 is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module

SAS 251

Contextual Info: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.