MODEL 233 Search Results
MODEL 233 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TPS6508700RSKR |
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PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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| TPS6508700RSKT |
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PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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MODEL 233 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BNC-50
Abstract: ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510
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8503812SP-6 8503812SP7 85071ZSGA 85071ZSGB 85072ZSGA 85072ZSGB ADT-2584-NM-TNM-02 ADT-2585-NM-TNF-02 ADT-2586-NF-TNM-02 ADT-2587-NF-TNF-02 BNC-50 ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510 | |
TRM-2001
Abstract: ssm-5210
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OCR Scan |
8503812FP-3 8503812FP-5 8503812SP-6 8503812S 85071ZSGA ADT-2580-NM-SMM-02 ADT-2581-NM-SMF-02 ADT-2582-N F-SMM-02 ADT-2583-NF-SMF-02 TRM-2001 ssm-5210 | |
STR W 6856
Abstract: str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02
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OCR Scan |
8503812SP-6 85071ZSGA 85071ZSGB 85072ZSGA 85072ZSGB 85073ZSGA. 85073ZSGB 85074ZSGA 85074ZSGB 8604412SP-1 STR W 6856 str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02 | |
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Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-EDR4676 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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CK605 ROS-EDR4676 ROS-EDR4676 | |
LT1450ED
Abstract: GL6P201 GL7P210 GL5HY8 LT5013 LT9040E GL3CL8 GL107R12 LT9325E GL8P040
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OCR Scan |
GL3BX44 GL5BX43 GL5BX44 GL3HD43 GL3HS43 GL3HY43 GL3EG43 GL5LR41 GL5PR41 GL5HD41 LT1450ED GL6P201 GL7P210 GL5HY8 LT5013 LT9040E GL3CL8 GL107R12 LT9325E GL8P040 | |
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Contextual Info: Engineering Development Model Frequency Mixer HJK-ED8833 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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HJK-ED8833 TTT167 | |
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Contextual Info: Engineering Development Model Frequency Mixer HJK-ED9550/1 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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HJK-ED9550/1 TTT167 | |
RLF12560T-100M7R5-H
Abstract: RLF12560T-2R7N110-H RLF12560T-7R8N8R2-H RLF12560T-1R9N120-H TDK RLF12560T-1R0N140 RLF12560T-4R2N100-H RLF12545 RLF12545T-2R7N8R7-PF tdk 2025 RLF12545T-1R9N100-PF
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RLF12545 RLF12545T-1R9N100-PF RLF12545T-2R7N8R7-PF RLF12545T-4R2N6R5-PF RLF12545T-5R6N6R1-PF RLF12545T-7R8N5R4-PF RLF12545T-100M5R1-PF RLF12560 RLF12560-H RLF12560T-1R0N140-H RLF12560T-100M7R5-H RLF12560T-2R7N110-H RLF12560T-7R8N8R2-H RLF12560T-1R9N120-H TDK RLF12560T-1R0N140 RLF12560T-4R2N100-H RLF12545T-2R7N8R7-PF tdk 2025 RLF12545T-1R9N100-PF | |
VLCF4028T-100M1R0-2
Abstract: 28428 VLCF4028T-101M VLCF4020T-100MR85 28919 vlcf4020t-2r2n1r7 VLCF4028-2 VLCF4020 BOSCH+30616 VLCF4020T-1R8N1R9
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VLCF4020 VLCF4020T-1R8N1R9 VLCF4020T-2R2N1R7 VLCF4020T-3R3N1R5 VLCF4020T-4R7N1R2 VLCF4020T-6R8N1R0 VLCF4020T-100MR85 VLCF4020T-150MR68 VLCF4020T-220MR56 VLCF4020T-270MR48 VLCF4028T-100M1R0-2 28428 VLCF4028T-101M VLCF4020T-100MR85 28919 vlcf4020t-2r2n1r7 VLCF4028-2 BOSCH+30616 VLCF4020T-1R8N1R9 | |
S10-1620Contextual Info: SPICE Device Model SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS456DN 18-Jul-08 S10-1620 | |
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Contextual Info: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4204DY 18-Jul-08 | |
SLF12575-H
Abstract: SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603
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SLF12555 SLF12555T-6R0N3R6-PF SLF12555T-100M3R4-PF SLF12555T-150M2R8-PF SLF12555T-220M2R3-PF SLF12555T-330M1R9-PF SLF12555T-470M1R6-PF SLF12555T-680M1R3-PF SLF12555T-101M1R1-PF SLF12555T-151MR88-PF SLF12575-H SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603 | |
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Contextual Info: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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Si2304DDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si2304DDSContextual Info: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si2304DDS 18-Jul-08 | |
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Contextual Info: SPICE Device Model Si5419DU www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si5419DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model SQJ886EP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ886EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Model 233
Abstract: 233j 233k chopper stabilized
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Si5419DU
Abstract: 82608 S-82608
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Si5419DU 18-Jul-08 82608 S-82608 | |
Si4686DY
Abstract: SI4686
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Si4686DY 18-Jul-08 SI4686 | |
Si7716DN
Abstract: si7716
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Original |
Si7716DN S-82078-Rev. 08-Sep-08 si7716 | |
si4686dy
Abstract: SI4686
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Original |
Si4686DY S-52631Rev. 02-Jan-06 SI4686 | |
Si7716DN
Abstract: SI7716
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Original |
Si7716DN 18-Jul-08 SI7716 | |
Si7686DPContextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7686DP 18-Jul-08 | |
SI7686DPContextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7686DP S-51624Rev. 05-Sep-05 | |