MODEL 233 Search Results
MODEL 233 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TPS6508700RSKR | Texas Instruments | PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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| TPS6508700RSKT | Texas Instruments | PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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MODEL 233 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BNC-50
Abstract: ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510
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8503812sp-68503812sp785071zsga85071zsgb+12 | |
TRM-2001
Abstract: ssm-5210
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OCR Scan |
8503812fp-38503812fp-58503812sp-68503812s+8 | |
STR W 6856
Abstract: str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02
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OCR Scan |
8503812sp-685071zsga85071zsgb85072zsga+16 | |
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Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-EDR4676 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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ck605ros-edr4676 | |
LT1450ED
Abstract: GL6P201 GL7P210 GL5HY8 LT5013 LT9040E GL3CL8 GL107R12 LT9325E GL8P040
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OCR Scan |
gl3bx44gl5bx43gl5bx44gl3hd43+16 | |
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Contextual Info: Engineering Development Model Frequency Mixer HJK-ED8833 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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hjk-ed8833ttt167 | |
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Contextual Info: Engineering Development Model Frequency Mixer HJK-ED9550/1 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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hjk-ed9550/1ttt167 | |
RLF12560T-100M7R5-H
Abstract: RLF12560T-2R7N110-H RLF12560T-7R8N8R2-H RLF12560T-1R9N120-H TDK RLF12560T-1R0N140 RLF12560T-4R2N100-H RLF12545 RLF12545T-2R7N8R7-PF tdk 2025 RLF12545T-1R9N100-PF
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rlf12545rlf12545t-1r9n100-pfrlf12545t-2r7n8r7-pfrlf12545t-4r2n6r5-pf+13 | |
VLCF4028T-100M1R0-2
Abstract: 28428 VLCF4028T-101M VLCF4020T-100MR85 28919 vlcf4020t-2r2n1r7 VLCF4028-2 VLCF4020 BOSCH+30616 VLCF4020T-1R8N1R9
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vlcf4020vlcf4020t-1r8n1r9vlcf4020t-2r2n1r7vlcf4020t-3r3n1r5+12 | |
S10-1620Contextual Info: SPICE Device Model SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sis456dn18-jul-08s10-1620 | |
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Contextual Info: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4204dy18-jul-08 | |
SLF12575-H
Abstract: SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603
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slf12555slf12555t-6r0n3r6-pfslf12555t-100m3r4-pfslf12555t-150m2r8-pf+16 | |
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Contextual Info: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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si2304dds2002/95/ec2011/65/eujs709a+1 | |
Si2304DDSContextual Info: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si2304dds18-jul-08 | |
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Contextual Info: SPICE Device Model Si5419DU www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si5419du2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SQJ886EP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sqj886ep2002/95/ec2011/65/eujs709a+1 | |
Model 233
Abstract: 233j 233k chopper stabilized
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model 233233j233kchopper stabilized | |
Si5419DU
Abstract: 82608 S-82608
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si5419du18-jul-0882608s-82608 | |
Si4686DY
Abstract: SI4686
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si4686dy18-jul-08si4686 | |
Si7716DN
Abstract: si7716
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si7716dns-82078-rev08-sep-08si7716 | |
si4686dy
Abstract: SI4686
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si4686dys-52631rev02-jan-06si4686 | |
Si7716DN
Abstract: SI7716
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si7716dn18-jul-08si7716 | |
Si7686DPContextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si7686dp18-jul-08 | |
SI7686DPContextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si7686dps-51624rev05-sep-05 | |