SI4204DY Search Results
SI4204DY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4204DY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 19.8A 8-SOIC | Original | 10 |
SI4204DY Price and Stock
Vishay Intertechnologies SI4204DY-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.5A; Idm: 50A |
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SI4204DY-T1-GE3 | 1 |
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SI4204DY-T1-GE3 | 7,500 | 2,500 |
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| SI4204DY-T1-GE3 | 1,023 | 8 |
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SI4204DY-T1-GE3 | Tape & Reel | 19 Weeks | 2,500 |
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SI4204DY-T1-GE3 | 5,291 |
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SI4204DY-T1-GE3 | 7,500 | 19 Weeks | 2,500 |
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| SI4204DY-T1-GE3 | Cut Strips | 1,023 | 19 Weeks | 1 |
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SI4204DY-T1-GE3 | Bulk | 6,470 | 1 |
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| SI4204DY-T1-GE3 | Cut Tape | 1,750 | 1 |
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| SI4204DY-T1-GE3 | Tape & Reel | 1,750 | 10 |
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| SI4204DY-T1-GE3 | Tape & Reel | 2,500 |
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SI4204DY-T1-GE3 | Reel | 20,000 | 2,500 |
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SI4204DY-T1-GE3 | 100 |
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SI4204DY-T1-GE3 | 80 |
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SI4204DY-T1-GE3 | 21 Weeks | 2,500 |
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SI4204DY-T1-GE3 | 27 Weeks | 2,500 |
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SI4204DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4204dy18-jul-08 | |
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Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4204dy2002/95/ecsi4204dy-t1-ge32011/65/eu+1 | |
8891
Abstract: AN609 328667
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si4204dyan60921-jul-098891+1 | |
75156Contextual Info: Si4204DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si4204dyan60931-may-1075156 | |
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Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4204dy2002/95/ecsi4204dy-t1-ge325electronic+3 | |
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Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4204dy2002/95/ecsi4204dy-t1-ge32011/65/eu+1 | |
si4204Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4204dy2002/95/ecsi4204dy-t1-ge318-jul-08+1 | |
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Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4204dy2002/95/ecsi4204dy-t1-ge311-mar-11 | |
BCM89810
Abstract: BROADCOM BCM89810 ad2410 schematic usb to rj45 cable extender AT/BCM89810 INA3221
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adsp-sc584445-4060-2-ndsrn8040-6r8ycdbc540-g+9 | |
TJA1145
Abstract: INA3221
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adsp-sc589erj-2rkf8661x1/10werj-2rkf5101x+3 | |
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Contextual Info: Quad Buck Regulator Integrated Power Solution ADP5054 Preliminary Technical Data FEATURES TYPICAL APPLICATION CIRCUIT ADP5054 VREG VDD C1 INT VREG 100mA C0 SYNC/MODE RT OSC FB1 PVIN1 BST1 4.5V TO 15V SW1 C2 CH 1 BUCK 2A/4A/6A COMP1 C3 VREG L1 VOUT1 C4 Q1 |
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adp5054100macfg34adp5054acpz-r7+4 | |
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Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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vmn-pt0105-1007 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Contextual Info: Quad Buck Regulator Integrated Power Solution ADP5054 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT ADP5054 VREG C1 INTERNAL VOLTAGE REGULATOR 100mA VDD C0 SYNC/MODE OSCILLATOR RT FB1 PVIN1 4.5V TO 15.5V BST1 SW1 C2 CHANNEL 1 BUCK 2A/4A/6A COMP1 C3 VREG |
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adp5054100macfg34adp5054acpz-r7+4 |