MOBILE DDR SDRAM Search Results

K4X28163PH

Contextual Info: K4X28163PH Mobile-DDR SDRAM 8M x16 Mobile-DDR SDRAM 1 Revision 1.0 October 2005 K4X28163PH Mobile-DDR SDRAM Document Title 8M x16 Mobile-DDR SDRAM Revision History Revision No. History Draft Date Remark 0.0 - First version for target specification Feb. 21. 2005

K4X51163PG

Abstract: K4X51163PG-FGC6 K4X51163PGFGC6 K4X51163 K4X51163PG-FGC
Contextual Info: Final K4X51163PG - FGC6 7 (8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) -1- Revision 1.0 May 2008 Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM Document Title 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Revision History Revision No. History

K4X51323PC-8GC3

Contextual Info: Preliminary K4X51323PC - 7 8 E/G Mobile-DDR SDRAM 16M x32 Mobile-DDR SDRAM 1 Revision 0.6 October 2005 Preliminary K4X51323PC - 7(8)E/G Mobile-DDR SDRAM Document Title 16M x32 Mobile-DDR SDRAM Revision History Revision No. History Draft Date Remark 0.0 - First version for target specification

DDR222

Abstract: DDR266
Contextual Info: Preliminary K4X51323PC - 7 8 E/G Mobile-DDR SDRAM 16M x32 Mobile-DDR SDRAM 1 Revision 0.6 October 2005 Preliminary K4X51323PC - 7(8)E/G Mobile-DDR SDRAM Document Title 16M x32 Mobile-DDR SDRAM Revision History Revision No. History Draft Date Remark 0.0 - First version for target specification

AS4C32M16MD1

Contextual Info: AS4C32M16MD1 512M 32M x16 bit Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) LPDDR MEMORY 512M (32Mx16bit) Confidential 1 Mobile DDR SDRAM Rev. 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) Revision History

AS4C16M32MD1

Contextual Info: AS4C16M32MD1 512M 16M x32 bit Mobile DDR SDRAM Confidential (Rev. 1.0, July. /2014) LPDDR MEMORY 512M (16Mx32bit) Mobile DDR SDRAM Revision History Revision No 1.0 Description Initial Release Date 2014/07/18 AS4C16M32MD1 512M (16M x32 bit) LP Mobile DDR SDRAM

MT46H32M16LFBF

Abstract: MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4
Contextual Info: TN-46-16: 512Mb Mobile DDR: 95nm to 78nm Introduction Technical Note 512Mb Mobile DDR: 95nm to 78nm Product Transition Guide Introduction This document describes critical product differences associated with the 512Mb Mobile LP DDR SDRAM product as it transitions from 95nm process technology to 78nm

Elpida mobile

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR Mobile RAM EDK2516CBBH 16M words x 16 bits Description Pin Configurations The EDK2516CB is a 256M bits DDR Mobile RAM organized as 4,194,304 words×16 bits×4 banks. The DDR Mobile RAM achieved low power consumption

Contextual Info: Nov 2006 HYB18M512160BF-6 HYE18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev.1.80 HY[B/E]18M512160BF 512-Mbit DDR Mobile-RAM HYB18M512160BF-6; HYE18M512160BF-6 HYE18M512160BF-7.5

P-VFBGA 49 package

Abstract: Qimonda AG HYB circuit diagram of ddr ram HYB18M512160BF-6 HYE18M512160BF-6 P-VFBGA-60-1 HYB18M512 18M512160BF
Contextual Info: Nov 2006 HYB18M512160BF-6 HYE18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Internet Data Sheet Rev.1.80 HY[B/E]18M512160BF 512-Mbit DDR Mobile-RAM HYB18M512160BF-6; HYE18M512160BF-6 HYE18M512160BF-7.5

P-VFBGA 49 package

Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
Contextual Info: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision

mt46

Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V

L 3705 N

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks Preliminary‡ For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • •

TRCD3C

Abstract: mobile ddr
Contextual Info: Mobile DDR SDRAM MOBILE DDR SDRAM Device Operations & Timing Diagram 1 DEVICE OPERATIONS Mobile DDR SDRAM Precharge The precharge command is used to precharge or close a bank that has been activated. The precharge command is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge each bank

Contextual Info: Preliminary‡ 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • •

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

s11 stopping compound

Abstract: DEF01
Contextual Info: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT46H16M32

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H16M16LF - 4 Meg x 16 x 4 banks MT46H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile

Contextual Info: Advance‡ 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • • •

MT46H32M16LF

Abstract: dmo 365 r
Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • • • • • •

Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V