MO-193 AA Search Results

solder paste alpha WS609

Abstract: WS609 TSSOP YAMAICHI SOCKET Alpha WS609 Yamaichi Electronics ic51-0142 cc fuji CM92 DELL PWB mutual capacitance touch screens 2000 MO-193
Contextual Info: TVSOP Application Brief August 1996 draft 1.2 SCBA009A List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete

Alpha WS609

Abstract: Yamaichi TQFP 244 MO-194AA MO-193 MO-194 tssop 16 exposed pad stencil Alpha WS609 solder TSSOP YAMAICHI SOCKET MO-194AC SN74LVC16xxx
Contextual Info: TVSOP Application Brief December 1996 SCBA009B List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Draft 1.3 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete

jedec MO-193-AA

Abstract: MO-193 MO-193-AA UJ-6 uj6 aa diode aa 90 Diode UJ transistor MO-193AA MO-193 AA
Contextual Info: 6-Lead Thin Small Outline Transistor Package [TSOT] UJ-6 Dimensions shown in millimeters a 2.90 BSC 6 5 4 2.80 BSC 1.60 BSC 1 2 PIN 1 INDICATOR *0.90 0.87 0.84 0.10 MAX 3 0.95 BSC 1.90 BSC *1.00 MAX 0.50 0.30 SEATING PLANE 0.20 0.08 8° 4° 0° *COMPLIANT TO JEDEC STANDARDS MO-193-AA WITH

Contextual Info: CONTENTS Plastic Enclosures Pages: 1-22 Extruded Aluminum Enclosures Pages: 23-25 Meta NEED MORE INFORMATION? For detailed drawings, CAD files and color photos visit our website at: www.hammondmfg.com ABS Plastic - Soft Sided Hand Held 1553 Series KEY FEATURES

Contextual Info: 150 Series MallorY Metallized Polyester / Axial Leads I I I I I K I I a S » 1 > f l 8 5 S « «: S * S « • 5 ? B II S 5i n li Available Tape and Reel Tape Wrapped with Epoxy End Fill Non Inductively Wound Flame Retardant Polyester Wrap Meets UL510 Epoxy End Fill Meets UL94V-0

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

2X40

Abstract: "Power Triode" N7672
Contextual Info: 7986 TB2.5/400 R.F. POWER TRIODE X m Freq. (MHz) 2 150 3 6 100 50 QUICK REFERENCE DATA _ grounded C telegr. B teleph. grid w0 v a W0 v a W0 va (W) (W) (V) (W) (V) (V) 2500 390 2500 65 2000 295 2000 64 1500 210 1500 59 1000 126 2500 910 2000 700 1500 516

1.0KE28A

Contextual Info: SIE D niCRosEni coRP • bllSñbS □002053 aaa ■ Microsemi Corp. SCOTTSDALE, AZ SANTA ANA. CA nsc 1.0 K E 5 thru 1.0 K E 1 7 0 A For more information ca 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • AVAILABLE IN RANGES FROM 5.0 TO 170 VOLTS • AVAILABLE IN BIDIRECTIONAL FOR AC APPLICATIONS

Contextual Info: P2 WG MO CONN TYPE PL73 PL74 PL75 PL7SFL FL375 BJ74BJ74TL BJ74FL BJ374 BJ79 BJ79TL BJ79FL BJ379 PI PL95S PL95 CONN TYPE ÏÏPL95 SCHEMATICS 353 REVÏ9I0M8 DATA CONTAINED 1M TMW OQCUMMT I * «MFREffTAIW TO THÈ. AW SHALL MOT 96 DISCLO SE . CW *ISD OR USED R » Pfi0C U f» iT OR

socapex 127 series

Abstract: amphenol HiLinX SIHD CP013 Radsok material socapex HDAS smash 6mm radsok Amphenol Radsok contacts pins amphenol m55302
Contextual Info: Amphenol HiLinX Connectors High density modular PCB interconnects system for harsh environments applications HiLinX Connectors scope For more than 30 years, Amphenol Socapex has designed, manufactured high performances Board Level Interconnects solutions. Historical manufacturer of

Trompeter Electronics PL74-56

Contextual Info: PI P2 CONN TYPE FIG NO BJ74 BJ74TL BJ74FL BJ374 BJ79 BJ79TL BJ79FL BJ379 CJ70 CJ70TL CJ70FL CJ370 PL73 PL74 PL75 PL75FL PL375 PL71 1A 1A 1A IB 2A 2A 2A 2B 3A 3A 3A 3B 4A 4B 4B 4B 5A 5B OATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC.

Contextual Info: i I NICHT VERMASSTE KANTEN c 0n 1 SIND NICHT MA0STABLICH GO CM Q O ER5TE ZEICHNUNG GESCHOTZT DURCH ANDERUNGEN DIE DEM TECH COPYRIGHT 1986 NISCHEN FORTSCHRITT DIENEN, AMP DEUTSCHLAND GMBH BEHALTEN WIR UNS V0R ALLE RECHTE V0RBEHALTEN REV. K An d e r u n g DATUM

XC5402

Abstract: XC5406 XC5410
Contextual Info: f l XILINX XC5400 Hardwire Array Family Preliminary Product Specification Features Description • Mask Programmed version of the XC5200 Field Programmable Gate Array FPGA - Specifically designed for easy XC5200 conversion - Significant cost reduction for high volume

MS-011

Abstract: jc-11.3 item 67 AAAD
Contextual Info: 3 FIGURE 1 A NOTES: 1. Controlling Dimensional INCH In c t M of c o n flic t b«tw ««n th e E n g lish and m ttr ic dlrm m ion«, Un inch dimension« control. 2. Dimensioning end tolerencing per ANSI Y 14.5M -1982* 10. Com er leede 1, N, N /2, and N /2«l) may be configured as

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

17-18L

Contextual Info: Outline drawings D im ensions in mm and inch 1 mm = 0.0394" 4 TO-247 SMD TO-220 AB TO-263 AA TO-247 AD E H f 1" i n A 4! M J D o , dT T *T 2 CJ i; 3 I ♦ B f I * H i m F * f A I p- C : A 1. Gate 2. Drain (Collector) 3. Source (Emitter) 4. Drain (Collector)

6MBI8F-120

Contextual Info: 6M BI8F-1 20 8A : Outline Drawings )V IG B T IGBT M O D U LE : Features Low Saturation Voltage • /±SEi& (M O S -ir— H fc jg ) Voltage Drive Variety of Power Capacity Series Tob 1yp6 rimirale {AMP Mo.llO «auivaLint) Tob tjrp* Urmlnol.« {AMPNo.agU aajlvolTt)

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

Contextual Info: HB56E836 Series, HB56E436 Series 8388608-word x 36-bit High Density Dynamic RAM Module 4194304-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-673 Z Preliminary Rev. 0.0 Oct. 18, 1996 Description The HB56E836 Series is a 8 M X 36 Dynamic RAM Module, mounted 16 pieces of 16-Mbit DRAM

Contextual Info: BCcomponenls Product specification U ltra p re cisian leaded r e s is t o r s FEATURES • Superior thin film technology • Exceptional low TC: ±02 to ±10 ppm/K • Super tight tolerance: ±0,01 to ±0,25% • Exceptional overall stability: class 0,02 • W ide ultra precision range: 22 f l to 301 k£2

Contextual Info: PM4341A T1XC DATA SHEET ISSUE 7 T1 FRAMER/TRANSCEIVER :0 5: 21 AM PMC-900602 ,0 3M ay ,2 00 4 11 PM4341A fe fo n Mo nd ay T1XC DATA SHEET Do wn lo ad ed by ef we fe fe fo fe SINGLE DSX-1 TRANSCEIVER DEVICE ISSUE 7: JUNE 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C

1xgh32

Abstract: IXGH32N60B
Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C

5200 FPGA

Abstract: PC8421
Contextual Info: SIXILINX* XC5400 Hardwire Array Family Preliminary Product Specification Features Description • Mask Programmed version of the XC 5200 Reid Programmable G ate Array FPGA - Specifically designed for easy XC 5200 conversion - Significant cost reduction for high volume