MMIC S-BAND ATTENUATOR Search Results

Contextual Info: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING

Contextual Info: WIRELESS - Driver AWD1900 Driver MMIC Advanced Product Information Rev 0 1900 MHz Band PCS GaAs Power Amplifier IC DESCRIPTION: The AW D 1900 is a monolithic Driver Amplifier suited for P C S telephone applications. FEATURES: High Linearity Built in Step Attenuator

MAATGM0001

Abstract: MMIC s-band attenuator MAATGM0001-DIE S-band mmic
Contextual Info: RO-P-DS-3043 - - MAATGM0001-DIE S-Band Attenuator 2.0 – 6.0 GHz Features ♦ ♦ ♦ ♦ Preliminary Information 2.0 - 6.0 GHz GaAs MMIC Attenuator 2.0 to 6.0 GHz Operation 6 Bit Attenuator TTL Control Inputs Self-Aligned MSAG MESFET Process Primary Applications

IS-54

Abstract: SPDT FETs uPG13xG
Contextual Info: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz

Contextual Info: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M1-00 Chip C lit lin e F eat ur e s • Single Voltage Control CO o ■ 35 dB Attenuation Range ■ Balanced 0.25 im MESFET Non-Reflective Design ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883

fujitsu mmic ic

Contextual Info: FMM5020MU 900 MHz PDC MMIC Driver Preamplifier DESCRIPTION The FM M 5020M U is a MM IC driver pream plifier with gain control and is designed for applications in the 900 MHz band. The driver am plifier includes three am plifier stages and a variable attenuator.

Contextual Info: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M1-00 Features Chip Outline • Single Voltage Control CO o ■ 35 dB Attenuation Range ■ Balanced 0.025 im MESFET Non-Reflective Design ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883

fujitsu power amplifier GHz

Abstract: fujitsu l band amplifier fujitsu rf power amplifier l band
Contextual Info: FMM5021MU 1.5GHz MMIC Driver Amplifier DESCRIPTION The FMM5021MU is a MMIC driver amplifier with gain control that is designed for Personal Digital Cellular PDC applications in the 1,5GHz band. The driver amplifier includes three amplifier stages and a variable attenuator.

k MESFET S parameter

Contextual Info: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M2-00 Chip Q j t l i n e F eat ur e s • Dual Voltage Control CM CO CD ■ 35 dB Attenuation Range ■ Triple Gate 0.25 im MESFET Design ■ +10 dBm Pi dB All Attenuation States ■ 100% On-Wafer RF and DC Testing

FMM5024ML

Contextual Info: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES

variable resistor

Abstract: mmic A MS-012AA AT65-0008 8 PIN pin diode attenuator
Contextual Info: PRODUCT FEATURE A VOLTAGE VARIABLE ATTENUATOR USING SILICON PIN DIODES AND A PASSIVE GAAS MMIC IN A PLASTIC SMT PACKAGE A unique voltage variable attenuator VVA has been developed for the commercial wireless market. The device has linear operating power and intercept points

Contextual Info: HMC110G16 v01.0301 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION 1 dB LSB GaAs MMIC SMT 5-BIT DIGITAL ATTENUATOR, DC - 2.0 GHz ATTENUATORS - SMT 2 Typical Applications Features • Base station Infrustructure Bandwidth: DC - 2 GHz • Portable Wireless

5965-5089E

Abstract: DRT1-3813 DRT1-3823
Contextual Info: Digital Radio Transmitter Modules for 37 to 40␣ GHz Technical Data DRT1-38XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at

DRT1-2311

Abstract: DRT1-2312 DRT1-2321 DRT1-2322 DRT1-23XX
Contextual Info: Digital Radio Transmitter Modules for 21.2 to 23.6␣ GHz Technical Data DRT1-23XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at

KA 1046 Y 620

Contextual Info: CS-516003 ELECTRONICS Broadband UHF Voltage Variable Attenuator Sam sung M icrow ave Sam iconductor March1996 Prelim inary 300 - 3000 MHz Description Features (Typical) The C ? - * 16003 is a high performance Monolithic Microwave Integrated Circuit (MMIC) housed in a

5965-5090E

Abstract: DRT1-2311 DRT1-2312 DRT1-2321 DRT1-2322 DRT1-23XX
Contextual Info: Digital Radio Transmitter Modules for 21.2 to 23.6 GHz Technical Data DRT1-23XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at

gsm Handset Circuit Diagram

Abstract: gsm transceiver circuit diagram of 7436 ic telephone handset circuit schematic diagram Roland e 38 schematic WLAN chips em reader module direct conversion GSM CELERITEK SWITCH GSM module circuit diagram
Contextual Info: HIGH HARMONIC-REJECTION MATCHING FILTERS FOR QUAD-BAND POWER AMPLIFIERS In this article, matching filters for GSM amplifiers capable of providing large harmonic rejection are demonstrated using M/A-COM’s high Q GaAs MMIC technology. The matching filters are designed

AT-108-PIN

Contextual Info: A fa Voltage Variable Absorptive Attenuator. 40 dB AT-108 0.5-2 GHz July ’93 Features • • • • • • SO-8 Single Positive Voltage Control 40 dB Attenuation Range at 0.9 GHz ±2 dB Linearity from B.S.L. Low DC Power Consumption Low Cost SOIC8 Plastic Package

Contextual Info: Voltage Variable Absorptive Attenuator DC-2 GHz AT-259 SOT-143 Features Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 |iW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40 'C to + 85"C

J 3305-1

Abstract: T-108 T108 at-108
Contextual Info: Voltage Variable Absorptive Attenuator. 40 dB 0.5-2 GHZ ^July '93 AT-108 Features SO-8 • Single Positive Voltage Control • 40 dB Attenuation Range at 0.9 G H z "« .2284-,2440 n s o 'io m <5'80-6-20 hot • ±2 dB Linearity from B.S.L. • Low DC Power Consumption

fr 309

Abstract: AT-309TR sj86 AT-309 AT-309RTR JC63S-J
Contextual Info: « 4 M P A » v w iy Voltage Variable Absorptive Attenuator, 20 dB DC - 2 GHz AT-309 V 2.00 SO-8 Features • • • • • • • • 20 dB Voltage Variable Attenuation Very Low Power Consumption: 50 pW Low Intermodulation Products Dual Voltage Control 0 to -4 Volts

HMC313

Abstract: HMC213 HMC361S8G HMC364S8G hmc362 HMC394LP4 HMC341 HMC361 HMC362S8G HMC363
Contextual Info: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION SPRING/SUMMER 2001 New Prescalar Product Line Meets The Demands of Broadband Markets! Hittite announces ten 10 new prescalar standard products that operate from DC to 13GHz. Standard division ratios of two, four, and eight have

SOT25 POS

Abstract: AT-266 AT-266RTR AT-266TR M513
Contextual Info: M/A-OOM Digital Attenuator, 1 Bit, 10 dB Step DC - 2.0 GHz M RF & Microwave Products SOT-25 Plastic Package Features • • • /MOCOVI Single 10 dB Step Low Loss 0.3dB Typ. @ 900 MHz Low Cost Plastic SOT25 Package 1,90 ± 0 ,2 .043 .004 1 ,1 0 + 0 ,2 -0,1

Contextual Info: Voltage Variable Absorptive Attenuator DC-2 GHz AT-250 SO-8 Features PIN £ 12 dB Voilage Variable Attenuation Low Intermodulation Products Low DC Power Consumption: 50 |jW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40"C to + 85"C