MMIC MARKING CODE U Search Results

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

marking bms

Contextual Info: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

Contextual Info: TAT9988 CATV GaN Power Doubler MMIC Applications • HFC Nodes • CATV Line Amplifiers • Head End Equipment 40 Pin 5x7 mm QFN Package Product Features • • • • • • • • • • Functional Block Diagram Excellent High Output Linearity High Gain 24dB @ 1000MHz

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

A03 MMIC

Abstract: mmic a03 A03 monolithic amplifier marking A03 HP MMIC marking code s22 marking sot-143 MSA-0311 MSA-0311-BLK MSA-0311-TR1
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0311 Features Description • Cascadable 50 Ω Gain Block The MSA-0311 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT-143 package. This MMIC is

A03 MMIC

Abstract: MMIC marking code S2 MMIC Amplifier A03 MMIC marking CODE 06
Contextual Info: What mLliM HEWLETT* PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical Px dI! at -1.0 GHz • Unconditionally Stable

BGA2776

Abstract: SMD MARKING g5 snw-eq-608 MGU455
Contextual Info: BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

mmic code marking P 18

Abstract: MMIC marking CODE 06 rf mmic marking code 09 SOT363 CSH210 rf mmic marking code 26 SOT363
Contextual Info: GaAs MMIC CSH210 Preliminary Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device

MMIC marking CODE AC

Abstract: LK1608R47K-T AN176 BGB717L7ESD TSLP MMIC marking code R mmic amplifier marking code l
Contextual Info: D a t a S he et , R e v . 3 . 2 , F e b r u a r y 2 01 0 BGB717L7ESD S i G e :C L o w N o i s e A m p l i f ie r M M I C f o r F M R a d i o A p pl i c a t i o n s S m a l l S i g n a l D i s c r et e s Edition 2010-02-09 Published by Infineon Technologies AG,

rf mmic marking code 26 SOT363

Abstract: marking code 02 mmic mmic 26 SOT363 rf mmic marking code 09 SOT363 CSH210R MMIC code D mmic "Marking 19" rf mmic 26 SOT363 INFINEON SOT363 marking code AN mmic
Contextual Info: GaAs MMIC CSH210R Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device

marking code AN mmic

Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage

Contextual Info: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

MMIC marking code R

Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

sot363 gaAS

Abstract: CSH210 CSH210P 30GHz switch
Contextual Info: GaAs MMIC CSH210P Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • High IP3 • No supply Voltage needed • Positive Operating voltage range: 2.7 to 5 V • SOT363 package 2mm x 2mm

Contextual Info: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION