MMIC MARKING CODE U Search Results

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

amplifier 900mhz

Abstract: amplifier siemens marking RF 98 CGY93P
Contextual Info: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P

0918

Abstract: amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin
Contextual Info: CGY 0918 GaAs MMIC l l l l Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Contextual Info: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code

Contextual Info: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

BGA310

Abstract: Q62702-G0041
Contextual Info: BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 9 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.4 GHz l Plastic Package -1dB Type Marking BGA310 BLs Ordering Code 8-mm taped Q62702-G0041

BGA318

Abstract: Q62702-G0043
Contextual Info: BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 16 dB typical Gain at 1.0 GHz l 12 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 1.2 GHz l Plastic Package -1dB Type Marking BGA318 BNs Ordering Code 8-mm taped Q62702-G0043

BGA312

Abstract: Q62702-G0042 mmic-amplifier BMS 13-58 Type 01
Contextual Info: BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 11 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.0 GHz l Plastic Package -1dB Type Marking BGA312 BMs Ordering Code 8-mm taped Q62702-G0042

marking bms

Contextual Info: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped

Contextual Info: S IE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 £2-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidttv. DC to 2.0 GHz Plastic Package Type Marking BGA312 BMs Ordering Code

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

LOT CODE NEC

Abstract: marking e2 mmic MMIC marking code U mmic marking code nec lot number on REEL label code marking NEC date code marking NEC nec mmic marking code nec example of lot number nec lot number on packing label
Contextual Info: Information TAPING SPECIFICATIONS OF 8 PIN PLASTIC SSOP 175 mil FOR Silicon/GaAs MMIC Document No. P12403EJ2V0IF00 (2nd edition) Date Published March 1998 N CP(K) 1997 Printed in Japan The information in this document is subject to change without notice.

Contextual Info: TAT9988 CATV GaN Power Doubler MMIC Applications • HFC Nodes • CATV Line Amplifiers • Head End Equipment 40 Pin 5x7 mm QFN Package Product Features • • • • • • • • • • Functional Block Diagram Excellent High Output Linearity High Gain 24dB @ 1000MHz

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

CXM3592AUR-T9

Abstract: ic 8355 jammer gsm
Contextual Info: Ultra-High Linearity SPDT Switch CXM3592AUR Description The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder.