MMIC MAR 3 Search Results

Marking G4 SOT363

Abstract: marking code G4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2771 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2776 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2776 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2711 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2711 PINNING FEATURES • Internally matched PIN DESCRIPTION

89122

Abstract: BGA2748 Philips 9510
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2748 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2748 PINNING FEATURES • Internally matched PIN DESCRIPTION

marking CODE A3

Abstract: MAM440
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING

smd Product type marking code 039

Abstract: MAM440 marking code 016 MMIC SMD marking 101 MMIC
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 Philips Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING

9323 12515

Abstract: 7447 7404 MAR8
Contextual Info: MAR-8A Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8A Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

7447

Abstract: 7404
Contextual Info: MAR-8ASM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8ASM Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING • High gain

Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

grm36 murata

Abstract: MURATA IF BPF 190 MHz MURATA GRM36 NJG1714KC1
Contextual Info: TENTATIVE NJG1714KC1 Mar.06,2002 Ver.0 Under Development 1.9GHz BAND FRONT-END GaAs MMIC n GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

MMIC MAR-3

Contextual Info: MAR-3+ MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

Contextual Info: MAR C ON I MTLS LTD 25 37tiflSGl □QOCIOL.R 1 PLESSEY T-s/-// Three Five Product Information GaAs MMIC Switch P35-4270 4GHz SPST Reflective Features • Broadband performance. • D.C. to 4GHz frequency range. • Low power consumption. • Nanosecond switching speed.

Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain

26TX0555

Abstract: XU1009-BD usb drive
Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain

MAR-3SM

Abstract: MMIC MAR-3sm MAR3SM
Contextual Info: MMIC Amplifier MAR-3SM+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, Temperature = +25°C INPUT POWER = -20dBm, CURRENT = 35mA 15.0 15.0 14.5 -45°C 14.5 28mA 14.0 +25°C 14.0 35mA 13.5 +85°C 13.5 42mA 13.0 dB (dB)

52521

Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

MMIC MAR-3

Abstract: MAR-3 mar3
Contextual Info: MMIC Amplifier MAR-3+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, Temperature = +25°C INPUT POWER = -20dBm, CURRENT = 35mA 15.0 15.0 14.5 -45°C 14.5 28mA 14.0 +25°C 14.0 35mA 13.5 +85°C 13.5 42mA 13.0 dB (dB)

XB1007-QT

Abstract: B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +19.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

pHEMT transistor MTBF

Contextual Info: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match

34036

Abstract: 74209 XL1002 28LN3BA0050 84-1LMI 730069 9437 54227
Contextual Info: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier L1002 March 2005 - Rev 01-Mar-05 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing