MMIC MAR 3 Search Results

Marking G4 SOT363

Abstract: marking code G4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2771 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2776 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2776 PINNING FEATURES • Internally matched PIN DESCRIPTION

89122

Abstract: BGA2748 Philips 9510
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2748 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2748 PINNING FEATURES • Internally matched PIN DESCRIPTION

marking CODE A3

Abstract: MAM440
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING

smd Product type marking code 039

Abstract: MAM440 marking code 016 MMIC SMD marking 101 MMIC
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 Philips Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING

9323 12515

Abstract: 7447 7404 MAR8
Contextual Info: MAR-8A Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8A Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

7447

Abstract: 7404
Contextual Info: MAR-8ASM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8ASM Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING • High gain

Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

grm36 murata

Abstract: MURATA IF BPF 190 MHz MURATA GRM36 NJG1714KC1
Contextual Info: TENTATIVE NJG1714KC1 Mar.06,2002 Ver.0 Under Development 1.9GHz BAND FRONT-END GaAs MMIC n GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

MMIC MAR-3

Contextual Info: MAR-3+ MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

MMIC MAR-3sm

Abstract: mar-3sm
Contextual Info: MAR-3SM+ MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

26TX0555

Abstract: XU1009-BD usb drive
Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain

MAR-3SM

Abstract: MMIC MAR-3sm MAR3SM
Contextual Info: MMIC Amplifier MAR-3SM+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, Temperature = +25°C INPUT POWER = -20dBm, CURRENT = 35mA 15.0 15.0 14.5 -45°C 14.5 28mA 14.0 +25°C 14.0 35mA 13.5 +85°C 13.5 42mA 13.0 dB (dB)

52521

Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

MMIC MAR-3

Abstract: MAR-3 mar3
Contextual Info: MMIC Amplifier MAR-3+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, Temperature = +25°C INPUT POWER = -20dBm, CURRENT = 35mA 15.0 15.0 14.5 -45°C 14.5 28mA 14.0 +25°C 14.0 35mA 13.5 +85°C 13.5 42mA 13.0 dB (dB)

XB1007-QT

Abstract: B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +19.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

pHEMT transistor MTBF

Contextual Info: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match

34036

Abstract: 74209 XL1002 28LN3BA0050 84-1LMI 730069 9437 54227
Contextual Info: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier L1002 March 2005 - Rev 01-Mar-05 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

MAR-8SM

Contextual Info: MMIC Amplifier MAR-8SM+ Typical Performance Data dB 36 mA RETURN LOSS IN (dB) 36 mA RETURN LOSS OUT (dB) 36 mA 39.43 38.95 38.08 36.23 32.66 30.40 28.76 27.50 26.43 25.57 24.74 24.04 23.35 22.74 22.21 21.67 21.19 20.78 20.35 19.97 19.63 19.35 19.02 18.78

Contextual Info: MMIC Amplifier MAR-8ASM Typical Performance Curves S21 vs. CURRENT INPUT POWER: PORT1=-30dBm, PORT2=0dBm, Temperature=+25°C S21 vs. TEMPERATURE INPUT POWER: PORT1=-30dBm, PORT2=0dBm, CURRENT=36mA 35 35 29mA -45°C 30 +85°C 25 36mA 43mA 25 20 dB (dB) 30