9437 Search Results

Contextual Info: M ITSU BISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This

Stanson Technology

Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Contextual Info: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION 9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: M ITSUBISHI LSIs MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The MH1 M 0 9 B 0 A J /J A is 1 0 4 8 5 7 6 -w ord x 9 - bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side] RAM. This consists o f tw o industry standard 1M x 4 dynamic

Contextual Info: MITSUBISHI LSIs MH26636BJ-7, -8, -10 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 2 6 6 3 6 B J is a 2 6 2 1 4 4 -w o rd x 36 b it d y n a m ic R A M . T his is consists o f nine in d u s try standard 2 5 6 K x 4 b it d y n a m ic R A M s in SOJ and one d riv e r in SOP.

HF30D060ACE

Abstract: metal rectifier diode
Contextual Info: PD - 94379 HF30D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

Contextual Info: MITSUBISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 2 6 2 1 4 4 -word by 3 6 - bit dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This

Contextual Info: MITSUBISHI LSIs {DRAM MODULE MH25636XJ-8/ MH25636SXJ-8 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION M H 2 5 6 3 6 X J /S X J is 2 6 2 1 4 4 -w o rd by 3 6 -b it dynamic RAM PIN CONFIGURATION (TOP VIEW) [Single side] o module. This consists o f tw o industry standard 256K x 18b it

R166

Abstract: 9437 R166.005.000 R16600
Contextual Info: RAMAIO R 1 6 6 .005.000 TECHNICAL DATA COAXIAL CONNECTORS STRAIGHT CABLE PLUG-CLAMP TYPE CABLE 5/50 Issue : 9437 Page 1 /2 Series :C 1— - 1.37a- — J I Hex. 0.433 flat Hex. ll/plats DIA 0.5 (012.7) DIA 0.748 (019) I 0.433 2 flat

AN-994

Abstract: IRFR120 IRFR3412 IRFU3412 U120 power MOSFET IRF data
Contextual Info: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

HF20D060ACE

Abstract: CR diode transient
Contextual Info: PD - 94378 HF20D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

HF20D060ACE

Contextual Info: PD - 94378 HF20D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

Contextual Info: MH1 M09B0CJ-7.-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 1M 09B0C J is 1 0 4 8 5 7 6 -w o rd x 9 - b it dynamic RAM and consists o f tw o industry standard 1M x 4 dynamic RAMS

m5m51008afp

Contextual Info: M H1M09AN-85L,-10L,-12L,-15L,-85H,-10H,-12H,-15H / MH1 M09ANZ-85L.-10L,-12L,-15L,-85H,-10H,-12H,-15H 9437184-BIT 1Q48576-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION The M H1M 09AN/ANZ is 9437184-bit CMOS static • Single 5V power supply RAM organized as 1048576-word by 9-bit. It consists of eight

RRR137

Abstract: R04350B M102713
Contextual Info: THIRD ANGLE PROJECTION REV 4 OR A B SUGGESTED D H 8 2 0 /R R R 1 5 7 REVISIONS DESCRIPTION ECN No. MOUNTING CONFIGURATION CASE STYLES. DATE 09/22/05 NEW RELEASE ADDED ’’.WITH SMOBC” 01/12/06 UPDATED DRAWING PER T B - 4 1 2 + 11/14/06 M 94379 M 102713

IRGC50B60KB

Abstract: 4kA IGBT
Contextual Info: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

PT1000 temperature sensor

Abstract: 9435-300 9435-300 sensor dissolved oxygen sensor pt1000 temperature sensor schematic schematic inductive sensor flow meter dissolved water flow meter transmitter dissolved o2 sensor membrane key
Contextual Info: Data Sheet SS/9437_7 Low and High Level Dissolved Oxygen Monitor Model 9437 • Monitors both high and low dissolved oxygen concentrations – making it suitable for measurement during two-shift and base-load operations on power stations ■ Fast response

IRFU3412

Abstract: AN-994 IRFR120 IRFR3412 U120 irf 064 power MOSFET IRF data
Contextual Info: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: MITSUBISHI LS Is SRAM MODULE MH1 M09SSP-25,-35,-45 -ÍW S«", a 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] This is consists nine industry 1M x 1bit static RAMs in TSOP. A6 1 2 3 4 A7 5 A8 6

IRGC20B60KB

Contextual Info: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

1kA IGBT

Abstract: IRGC30B60KB
Contextual Info: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

30N5F

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT(1048576-WORD BY 9-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Single side] The M H 1M 09B 0A J/JA is 1 0 4 8 5 7 6 -word x 9 - bit dynamic RAM. This consists of tw o industry standard 1M x 4 dynamic

EZ 0710

Abstract: 4lu4e 234T0 J137 L437 lcd Inverter Delta 13 pin 20PM sharp lcd tv ics sharp lcd panel 20 pin
Contextual Info: 00/06/90 ie:2&;24 SHABP FastFax-> S H A R P 9493612121 1-000-033-9437 C O R P O R A T I O N O S A K A , SPECIFICATION M O D E L NO. : B R A N D N A M E : J A P A N FOR LCD D I S P L A Y 4 L-U 4 E S HARP C U S T O M E R : S. S. C C O U N T R Y ; J. S. A m . , 20,1994