MMIC AMPLIFIER S5 Search Results

transistor S710 diagram

Contextual Info: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for

Contextual Info: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for

S413

Abstract: SKY65135 SKY65135-21 C1222 transistor c1222 S414 FR4-12
Contextual Info: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for

103106F

Abstract: SKY65131-21 S106 S107 S324 S580 SKY65131
Contextual Info: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal

103252F

Abstract: C2330 s415 S413 S414 SKY65132 power amplifier 5 ghz mcm 750 AC1222 C1222 transistor
Contextual Info: DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for

Contextual Info: PRELIMINARY DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal

Contextual Info: SIEMENS CGY 50 GaAs MMIC Single-stage monolithic microwave 1C MMIC-amplifier Cascadable 50 i l gain block Application range: 100 MHz to 3 GHz IP3 30 dBm typ. @ 1.8 GHz Gain 8.5 dB typ. @ 1.8 GHz Low noise figure: 3.0 dB typ @ 1.8 GHz Gain control dynamic range 20 dB

Contextual Info: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for

Contextual Info: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal

Contextual Info: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal

2417 "cross reference"

Contextual Info: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for

Contextual Info: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for

mmic e3

Abstract: dg s22
Contextual Info: e3 Stanford Microdevices Product Description SNA-300 Stanford Microdevices' SNA-300 is a GaAs monolithic broad­ band amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency

Siemens C

Abstract: GY0819 diode 1N 0403 "1u0 1206"
Contextual Info: SIEMENS CGY0819 GaAs MMIC • • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

Contextual Info: Wfinl H EW LETT m L rJk PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications • Amplifier for Cellular,

RF AMPLIFIER marking S5

Abstract: SNA586 mmic AMPLIFIER marking S5
Contextual Info: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation

SNA-586

Abstract: RF AMPLIFIER marking S5
Contextual Info: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation

SNA-586

Abstract: ECB-100330 Sirenza Microdevices sna586 DC-5GHZ SOT-86 NGA-586 Sirenza Microdevices, Inc
Contextual Info: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage

mmic s5

Abstract: SNA-586 MMIC Amplifier s5 ECB-100330 SNA 586 datasheet NGA-586 sna 586 SNA586
Contextual Info: Preliminary Preliminary Product Description SNA-586 Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage

Contextual Info: What mifiM HEWLETT PACKARD Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01170 Features • Cascadable 50 Q Gain Block • Low Noise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth: DC to 500 MHz

IK-120

Contextual Info: fT Jf HEWLETT •321 PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical P t dB at -1 .0 GHz • Unconditionally Stable

FMA3050

Contextual Info: FMA3050 Pilot Datasheet v2.1 6-8.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 34 dB Gain 30 dBm P1dB Output Power at 6 V, 1.4 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5.1 x 3 sq. mm die D1 D2 D3 D4

FMA3051

Abstract: FMA3051-000
Contextual Info: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4