MMBT3906 2A Search Results

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

MMBT3906

Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Contextual Info: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

2N3906 SOT-23

Abstract: K3N SOT-23 SOT-23 2A 2n3906 sot 23 2n3906 sot23 PNP 2N3906 MMBT3906 2N3906 2N3906 die 2n3906 2a
Contextual Info: 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT3906 Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available

TRANSISTOR SMD MARKING CODE QA

Abstract: smd code marking 2A sot23 transistor smd 303 TRANSISTOR SMD MARKING CODE 2A smd transistor marking p1 TRANSISTOR SMD p1 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 210 smd 303 transistor
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)

MMBT3906-2A

Abstract: MMBT3904 MMBT3906
Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2009-04-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-10-17 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

model of 2n3906

Contextual Info: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced

2n3906

Abstract: MMBT3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

Contextual Info: General Purpose Transistor MMBT3906-HF RoHS Device Halogen Free PNP Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector

Contextual Info: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

Mmbt3906

Abstract: 2N3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223

2N3906

Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced

TRANSISTOR SMD MARKING CODE 2A

Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE d2 smd code marking 2A sot23 marking code SS SOT23 transistor TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE 16 TRANSISTOR SMD MARKING CODE X D smd transistor marking code P TRANSISTOR SMD MARKING CODE t 04
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)

MMBT3906-HF

Abstract: marking code SS SOT23 transistor marking code SS SOT23 transistor marking code transistor ad 1v MARKING CODE 16 transistor sot23 TRANSISTOR MARKING CODE ss transistor npn 2A sot 23 marking W1 sot23 ss sot23
Contextual Info: General Purpose Transistor MMBT3906-HF PNP RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00)

2n3906 2a

Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

MMBT3906 spice

Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
Contextual Info: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced

Contextual Info: MMBT3906 MMBT3906 Surface mount general purpose Si-epitaxial transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-11-07 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B

Contextual Info: 2N3906 / MMBT3906 F A IR C H IL D S E M IC O N D U C T O R tm 2N3906 ' BE # TO-92 SOT-23 / PZT3906 C MMBT3906 B Mark: 2A PZT3906 B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 ¡iA to 100 mA. Sourced

MMBT3906

Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3906 product family SOT-23 Plastic-Encapsulate Biploar Transistors

FLC 100

Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Contextual Info: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

Contextual Info: MMBT3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free ●FEATURES . RoHS Compliant Product . Epitaxial Planar Die Construction . Complementary NPN Type Available A COLLECTOR MMBT3904 L 3

MMBT3906G-AE3-R

Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER