MJE243 TRANSISTOR Search Results

MJE243 MOTOROLA

Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100
Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

MJE243G

Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

mje243

Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —

MJE243

Abstract: MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100
Contextual Info: ON Semiconductort NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

transistor MJE243 equivalent

Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

MJE243G

Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Contextual Info: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

mje253

Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243

Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

mje243

Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS

Contextual Info: MJE243 NPN , MJE253 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • http://onsemi.com 4.0 AMPERES POWER TRANSISTORS

mje243 transistor

Abstract: MJE253 MJE243 equivalent MJE243
Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

JE253

Abstract: JE243 JE233
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —

MJE243 equivalent

Abstract: MJE243 MJE253 to126 pin out
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

JE243

Abstract: JE253 je 243 Transistor 834
Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •

MJE243

Abstract: MJE253 to126 pin out
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

Transistor 834

Abstract: TRANSISTOR B 834 transistor MJE253 equivalent transistor MJE243 equivalent MJE253 MJE243 equivalent Vce(sat) MJE243 VCEO 100V TRANSISTOR 834 IC
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE243 DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 100 V(Min) ·DC Current Gain: hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

je240

Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

MJE240

Abstract: MJE243 MJE250 MJE244 MJE251 MJE241 MJE242 MJE252 MJE253 MJE254
Contextual Info: Datasheet Central MJE240 THRU MJE244 NPN MJE250 THRU MJE254 PNP Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO— 126 GASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

2N6410

Abstract: MJE251 MJE170 motorola 2N6412 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222
Contextual Info: MOTORÔLA~SC iDIODES/OPTOJ 34 6 3 6 7 2 5 5 M O T O R O L A SC DE | t 3 b ? S S S O D B T T m {D I O D E S / O P T O 34C 4 37964 SILICON POWER TRANSISTOR DICE continued) MJEC244 DIE NO. — NPN LINE SOURCE — PL500.E22 PNP NPN ÉSkâSk Complimentary transistors

BD786

Abstract: B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 BD185
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-126 Package (continued) R esistive Sw itching lcCont ^ C E O (sua) Amps Max Volts Min 4 NPN PNP ^FE M in/M ax @ lc Arrip ts t( US @ lc fr MHZ PD (Case) US Max Max Amp Min @ 25°C Watts 20 BD433 BD434 50 min

MJE241

Abstract: Power Transistors TO-126 Case MJe340 350 MJE222 mje520
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. •c (A) PD (W) MAX bvcbo BVCEO hi *E @ lc (V) 00 mm MIN MIN MAX (*BA) Bottom View VCE(SAT) 1C (V) (A) fT (MHz) NPN PUP MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15 80