MJD12 Search Results

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, MJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

MJD122

Abstract: TIP122
Contextual Info: MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating

MJD122T4G

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD122 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127

MJD1222

Abstract: mjd907
Contextual Info: MJD907 MJD907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in a Damper Diode at E-C Darlington TR Complement to MJD1222 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

morocco tip122

Abstract: TIP127 Application Note TO252 MJD122 MJD127 TIP122 TIP127 st morocco tip122
Contextual Info: MJD122 MJD127  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL

TS 4142

Abstract: W1000 MJD127 TIP127
Contextual Info: SAMSUNG ELECTRONICS INC MJD127 M2E D Bi 7=31,4142 000=1021, Ö Œ S M G K PNP SILICON DARLINGTON TRANSÌSTOR "T'33> -3' D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H ig h D C Current G ain Built-in a D am p e r D io d e at E-C L e ad F o rm e d tor S u rfa c e M o u n t A p p lic a tio n s N o Suffix

MJD127T4G

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS

TRANSISTOR tip122

Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
Contextual Info: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122

Contextual Info: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD127 Features • • • • Silicon PNP epitaxial planer Transistors High DC Current Gain Electrically similar to popular TIP 127

1N5825

Abstract: 2N6040 2N6045 MJD122 MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: ON Semiconductort NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

MJD122

Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Contextual Info: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)

MJD128T4G

Abstract: J128G
Contextual Info: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors

Contextual Info: MJD127 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • High DC Current Gain Built-in a Dam per Diode at E-C Lead Formed for Surface Mount Applications N o Suffix Straight Lead (l-PACK, “ - 1 ” Suffix) Electrically Sim ilar to Popular TIP122

tip120tip122

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features

Contextual Info: MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicraelctronics PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

Contextual Info: S A MS UN G E L E C T R O N I C S MJD122 INC 42E 3> B 7 cJ b m 4 2 QQQT023 2 Q S M G K NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H igh D C Current Gain Built-In a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD127 Features • • • • Silicon PNP epitaxial planer Transistors High DC Current Gain Electrically similar to popular TIP 127

"Darlington Transistor"

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1" Suffix)