MJ 340 Search Results

Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

Contextual Info: date 07/29/2011 page 1 of 3 SERIES: MJ-3536NG │ DESCRIPTION: MID MOUNT POWER JACK FEATURES • isolated ground pin • internal tip switch RoHS SPECIFICATIONS parameter conditions/description min rated input voltage typ rated input current contact resistance

JE4353

Abstract: 2U 34 mje4343 motorola MJE4340
Contextual Info: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

FKv550n

Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

2SK2701A

Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

FKV550N

Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

fkp*253

Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS

SLA5038

Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419

2SK1177

Abstract: 2SK2420 2SK1180
Contextual Info: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)

2sk30

Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

CDP1806ACEX

Contextual Info: fEj H a r r is \Mj „„, =o»DUC,». CDP1805AC CDP1806AC CMOS 8-Bit Microprocessor With On-Chip RAM* and Counter/Timer December 1991 Features Description • Instruction Tim e of 3.2ns, -40°C to +85°C The CDP1805AC and CDP1806AC are functional and performance enhance­

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

350T

Abstract: SGS340
Contextual Info: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi­ taxial planar NPN transistors intended for use in

stub ACME torque

Abstract: Stub ACME THREAD Sunbank kt 784 of ic 7808 ic 7808 MIL H 5606
Contextual Info: mJÈÈSl ÈgM — — •li _ w — / a ¡ J ’VpJ-^gl í'^ '^ is r fa ^ ¡■ ¡88B Ììtìl« it e . JSNBS*0001 RECEPTACLE DIMENSIONS SUNBANK E L E C T R O N IC S , INC. 3.250 TYP (82.55) - 1.253 — (31.83) CHARACTERISTICS: — 5.50 MAX (139.7) MECHANICAL

IXYS IXBOD

Contextual Info: Schottky Diode 10-95 A V RRM V 1 'f a v @ T1c A V FM @ 1 "FM °C 1 *AR mJ V @ RM rated V RWM mA A T j max. °C Package style Fig. No. Type The developm ent of Schottky diodes chips in the voltage range of V RRM = 35 - 100 V and for Beginning 1997 will be contained these diodes in the IXYS delivery program.

MJH16032

Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Contextual Info: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c­

TIP 22 transistor

Abstract: 2N5004 2N5002 2N5154 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152
Contextual Info: TYPES 2N5002, 2N5004, 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W IT H COM PU TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y For Complementary Use with 2N 50 03, 2N 50 05, 2N 51 51, and 2N 51 53 15 mJ Reverse Energy Rating w ith lc = 10 A and 4 V Reverse Bias

sn67 programming guide

Abstract: sonix programming guide sn67 sn65 SN65004 SN65007 SN65010 SN67004 SN68006 68060
Contextual Info: EASY FORMAT PROGRAMMING GUIDE for SN65/67/68 series ! OVERVIEW SN65/67/68 series is a series of 3 to 340seconds single chip voice/dual tone melody synthesizer IC containing several I/O ports and a tiny controller. By programming the tiny controller, user’s applications can then be implemented.

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

en iec 60721-3-3

Abstract: semikron skim semikron thermal switch
Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

500GD

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

D-050

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

mj 1504 transistor datasheet

Abstract: mj 1504 violin melody mj 1504 transistor SN66007 SN66010 SN66012 SN66016 SN66020
Contextual Info: SN66000 PROGRAMMING GUIDE ! OVERVIEW SN66 series is a series of 7-340 seconds single chip four-channel synthesizer IC containing several I/O ports and a tiny controller. By programming the tiny controller, user’s applications can then be implemented. Since the micro assembly language is very time-consumed and sometimes