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    MJ 300 Search Results

    MJ 300 Datasheets (59)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MJ300
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 56.01KB 1
    MJ3000
    Central Semiconductor Power Transistors Original PDF 53.28KB 1
    MJ3000
    Comset Semiconductors Silicon Epitaxial Base Darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF 154.79KB 4
    MJ3000
    Motorola 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF 134.32KB 4
    MJ3000
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF 11.8KB 1
    MJ3000
    Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF 398.7KB 4
    MJ3000
    Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF 47.07KB 1
    MJ3000
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 43.31KB 1
    MJ3000
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 160.18KB 4
    MJ3000
    Motorola The European Selection Data Book 1976 Scan PDF 55.78KB 1
    MJ3000
    Motorola Semiconductor Data Library Volume 3 1974 Scan PDF 56.39KB 1
    MJ3000
    Motorola Semiconductor Data Library Volume 3 1974 Scan PDF 34.13KB 1
    MJ3000
    Motorola European Master Selection Guide 1986 Scan PDF 51.86KB 1
    MJ3000
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 54.43KB 1
    MJ3000
    Unknown Transistor Replacements Scan PDF 95.55KB 1
    MJ3000
    Unknown Transistor Replacements Scan PDF 85.96KB 1
    MJ3000
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.81KB 1
    MJ3000
    Unknown Transistor Replacements Scan PDF 70.67KB 1
    MJ3000
    Unknown Cross Reference Datasheet Scan PDF 37.82KB 1
    MJ3000
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 100.89KB 1
    SF Impression Pixel

    MJ 300 Price and Stock

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    Carling Technologies V1B1BJ0B-AKCMJ-300

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    Master Electronics V1B1BJ0B-AKCMJ-300
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    Sager V1B1BJ0B-AKCMJ-300 1
    • 1 $15.17
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    • 100 $11.47
    • 1000 $8.21
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    Carling Technologies V1DAB60B-AECMJ-300

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    Master Electronics V1DAB60B-AECMJ-300
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    Sager V1DAB60B-AECMJ-300 1
    • 1 $13.23
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    Central Semiconductor Corp MJ3001 TIN/LEAD

    (Alt: MJ3001 TIN/LEAD)
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    Avnet Americas MJ3001 TIN/LEAD 80
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    Omega Engineering RSCM-J-3-0-0

    - Bulk (Alt: RSCM-J-3-0-0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RSCM-J-3-0-0 Bulk 3 Weeks 1
    • 1 $42.59
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    Newark RSCM-J-3-0-0 Bulk 1
    • 1 $42.59
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    • 100 $42.59
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    STMicroelectronics MJ3001

    - Bag (Alt: MJ3001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MJ3001 Bag 32 Weeks, 5 Days 600
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    MJ 300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STI-430

    Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
    Contextual Info: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts


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    dg0022lst-13071st-13080st-13081+16st-13090st-13091mj-13071mj-13080mj-13081mj-13090sti-430dts-411dts-804transistor dts801dts-430dts-423transistor mj 15024sti801dts-723transistor st 431 PDF

    NT 407 F TRANSISTOR

    Abstract: NT 407 F MOSFET TRANSISTOR
    Contextual Info: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T


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    260mb10nt 407 f transistornt 407 f mosfet transistor PDF

    molectron

    Abstract: Molectron Detector joulemeter 36643 QD41 molectron power max EM500 molectron p5-01
    Contextual Info: NE ! W JOULE MAX11 High Damage Threshold Pyroelectric Joulemeter Probe Features n n n n n n n n n n Damage Threshold: 300 mJ/cm2 at 1.06 µm 11 mm Diameter Sensor Area Broad Spectral Response: 0.1 to 1.1 µm Sensitive Range: 0.1 mJ to 300 mJ Rep Rate: 1 to 50 pps


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    max11em400em500epm1000+10epm2000jd501jmax11molectronmolectron detectorjoulemeter36643qd41molectron power maxmolectron p5-01 PDF

    MJ-LD4120-15

    Abstract: AUO LCD housing-IP66 512H G15M NT-G15MR sharp ccd 10.4 auo lcd DATE SHEET OF CLASS NIGHT lcd led tv
    Contextual Info: Neotech All-in-one Surveillance System AIO - MJ - 0415 15" MJ 4CH LCD DVR High Brightness IR Camera Cable Video+Power 4CH LCD DVR (MJ-LD4120-15) 415" A grade AUO LCD panel 4Modified MJPEG Algorithm compression 44CH DVR 120(100) fps recording capability 4Triplex (Playback / Recording / Ethernet)


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    mj-ld4120-15220maauto2500-9500auo lcd+8housing-ip66512hg15mnt-g15mrsharp ccd10.4 auo lcddate sheet of class nightlcd led tv PDF

    Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014


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    mb91580m/s32-bitfr81smb91f583mg/mh/mj/mk/sg/sh/sj/sk+5mb91f584mg/mh/mj/mk/sg/sh/sj/skmb91f585mg/mh/mj/mk/sg/sh/sj/skmb91585mgds705-00013ds705-00013-1v1-e PDF

    Contextual Info: BYD33DGP thru BYD33MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 10 mJ, 7 mJ trr 150 ns, 250 ns, 300 ns IR 5.0 µA


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    byd33dgpbyd33mgpdo-204aldo-41+2mil-s-1950008-apr-05 PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. series 5.2mmL MAX. height. MA Smaller MJ Specifications Item Performance Characteristics Category Temperature Range — 40 ~ +85˚C Rated Voltage Range 4 ~ 50V Rated Capacitance Range 0.1 ~ 220µF Capacitance Tolerance


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    120hz8100p PDF

    sma connector nsn

    Abstract: BG291 JCPS-8-10-75 JCPS-8-850 JCPS-8-850-75 PSC-8-1-75 PSC-8A4-75 ZC8PD1-10 ZC8PD-900 ZFSC-8-1-75
    Contextual Info: POWER SPLITTERS/COMBINERS 8 WAY-0° 50&75Ω 10 kHz to 1000 MHz SURFACE MOUNT PSC-8 JCPS-8 MODEL NO. FREQ. RANGE MHz fL-fU L MJ Typ. Max. Typ. Max. U Typ. Max. L MJ U Max. Max. Max. L Max. MJ U Max. Max. Note B C O N N E C T I O N 3 — 5 0.4 0.6 0.6 0.5 0.7


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    bg291jcps-8-10-75jcps-8-850-75jcps-8-850+6sma connector nsnpsc-8-1-75psc-8a4-75zc8pd1-10zc8pd-900zfsc-8-1-75 PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. series 5.2mmL MAX. height. MA Smaller MJ Specifications Item Performance Characteristics Operating Temperature Range —40 ~ +85°C Voltage Range 4 ~ 50V Capacitance Range 0.1 ~ 220µF Capacitance Tolerance ±20% at 120Hz, 20°C


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    120hzz--258100n PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. series 5.2mmL MAX. height. SA • SR Smaller MJ Specifications Item Performance Characteristics Category Temperature Range – 40 ~ +85°C Rated Voltage Range 4 ~ 50V Rated Capacitance Range 0.1 ~ 220µF Capacitance Tolerance


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    120hz8100t PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. series 5.2mmL MAX. height. Adapted to the RoHS directive 2002/95/EC . MA SA • SR Products which are scheduled to discontinue. Not recommended for new designs Smaller MJ Specifications Item Performance Characteristics


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    2002/95/ec120hz PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. series 5.2mmL MAX. height. Adapted to the RoHS directive 2002/95/EC . MA SA • SR Smaller MJ Specifications Item Performance Characteristics Category Temperature Range – 40 ~ +85°C Rated Voltage Range 4 ~ 50V


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    2002/95/ec120hz8100u PDF

    "BP 109"

    Abstract: MCL JCPS-8-10 mcl psc jcps bg291 JCPS-8-10 BG291 JCPS-8-10-75 JCPS-8-850 JCPS-8-850-75 PSC-8-1-75
    Contextual Info: POWER SPLITTERS/COMBINERS 8 WAY-0° 50&75Ω 10 kHz to 1000 MHz SURFACE MOUNT PSC-8 JCPS-8 MODEL NO. NEWu un un u FREQ. RANGE MHz fL-fU L MJ Typ. Max. Typ. Max. U Typ. Max. L MJ U Max. Max. Max. L Max. MJ U Max. Max. Note B C O N N E C T I O N 5 3 — 5 1.0


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    bg291bp 109mcl jcps-8-10mcl psc+6jcps bg291jcps-8-10jcps-8-10-75jcps-8-850jcps-8-850-75psc-8-1-75 PDF

    Contextual Info: POWER SPLITTERS/COMBINERS 8 WAY-0° 50&75Ω 10 kHz to 1000 MHz SURFACE MOUNT PSC-8 JCPS-8 MODEL NO. NEWu un un u FREQ. RANGE MHz fL-fU L MJ Typ. Max. Typ. Max. U Typ. Max. L MJ U Max. Max. Max. L Max. MJ U Max. Max. Note B C O N N E C T I O N 5 3 — 5 1.0


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    jcps-8-10jcps-8-10-75jcps-8-850-75jcps-8-850+5psc-8-1-75psc-8a4-75zfsc-8-1-75zfsc-8-43zfsc-8375 PDF

    Contextual Info: STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH 3 • ESD gate-emitter protection


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    stgd19n40lzaeq-q101docid024506 PDF

    Contextual Info: POWER SPLITTERS/COMBINERS 8 WAY-0° 50&75Ω 10 kHz to 1000 MHz SURFACE MOUNT PSC-8 JCPS-8 MODEL NO. FREQ. RANGE MHz fL-fU L MJ Typ. Max. Typ. Max. U Typ. Max. L MJ U Max. Max. Max. L Max. MJ U Max. Max. Note B C O N N E C T I O N 3 — 5 10 — 15 0.4 0.6


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    jcps-8-10-75jcps-8-850-75jcps-8-850psc-8-1-75+4psc-8a4-75zfsc-8-1-75zfsc-8-43zfsc-8375 PDF

    Contextual Info: STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified TAB • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH 3 • ESD gate-emitter protection


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    stgd19n40lzaec-q101docid024506 PDF

    GB18N40LZ

    Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
    Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    stgb18n40lzstgd18n40lzgb18n40lzgd18n40lz+7gd18ngb18n40gd18n40gb18n40lstgd18n40lz-1stgd18n40lzt4stgb18n40lzt4 PDF

    Contextual Info: nicK icon ALUMINUM ELECTROLYTIC CAPACITORS MJ 5.2mmL MAX. senes Smaller Anli-Sclvent Feature 5.2mmL MAX. height. MA Smaller :OTRO[ 1 MJ Specifications : Item j Performance Characteristics Operating Temperature flange - 4 0 — h85"C I Voltage Range 4-5 0 V


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    120hz PDF

    GD18N40LZ

    Abstract: GB18N40LZ GD18N GB18N40 SCHEMATIC IGNITION iGBT STGD18N40LZT4 ignition coil IGBT gb18n40l
    Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    stgb18n40lzstgd18n40lzgd18n40lzgb18n40lz+6gd18ngb18n40schematic ignition igbtstgd18n40lzt4ignition coil igbtgb18n40l PDF

    GD18N40LZ

    Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
    Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    stgb18n40lzstgd18n40lzgd18n40lzgb18n40lz+6gb18n40gd18ngd18n40stgb18n40lz-1stgb18n40lzt4stgd18n40lz-1 PDF

    GB18N40LZ

    Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
    Contextual Info: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    stgb18n40lzstgd18n40lzstgp18n40lzo-220+7gb18n40lzgd18n40lzautomotive pencil ignition coilgp18n40lzstgp18n40stgb18n40lz-1stgb18n40lzt4 PDF

    Contextual Info: Series Description Page Introduction 3 Compliant Contact 4 -5 Specifications 6 Edgecard Design Information For All C-Press Edgecard Connectors 7 MK, NK, MJ & NJ Series Edgecard .100" x .200" C Grid 8 -9 MK, NK, MJ & NJ Series Edgecard .125" x .250” D Grid


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    grid07a1856 PDF

    Contextual Info: STGD19N40LZ EAS 180 mJ - 390 V internally clamped IGBT Datasheet - production data Features • AEC Q101 compliant  180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH TAB  ESD gate-emitter protection 3  Gate-collector high voltage clamping 1  Logic level gate drive


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    stgd19n40lzdocid024506 PDF