MJ 14 X 1,5 - 4 Search Results

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

Semipack skfh 40

Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
Contextual Info: Ifrms maximum values for continuous opïeration V rsm V rrm 130 A V 60A(94°C) | 130 A [ 300A Ifav (sin. 180; Tea58 ” «••°C; 50 Hz 160 A (86 °C) 60A(94°C) 300 A 160 A (86 °C) SKFH110/04. 400 800 SKFH 40/08 SKFH 60/08. SKFH110/08. SKKD 160 M08

BSM 225

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

BSM 15 GB

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

24TRANSISTOR

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

VAL-MS 350 VF

Abstract: FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM
Contextual Info: POWERSET BC/3+1-100VF POWERSET BC/3+1-100VF/FM Installation Instructions L-N MPB 18/1-8-BU VAL-MS 350. UN 230 V AC 230 V AC 230 V UC 440 V AC 50/60 Hz 350 V AC 260 V AC 50/60 Hz ≤ 1,5 kV ≤ 1,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω – 100 kA / 50 As /

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

SKiiP 82 AC 12 i t 1

Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
Contextual Info: SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

GA170DL

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

CDM-AEC-Q100-011

Abstract: VNQ5E160K-E VNQ5E160KTR-E
Contextual Info: VNQ5E160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max on-state resistance per ch. RON Current limitation (typ) ILIMH 10 A Off-state supply current IS

Contextual Info: VNQ5E160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max on-state resistance per ch. RON Current limitation (typ) ILIMH 10 A Off-state supply current IS

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

SKiiP 83 AC 12 i t 1

Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Contextual Info: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.

SL 100 NPN Transistor

Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • APX bbSBTBl 0026*175 263 A b L V iJ ^ I- V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers of television transmitters and transposers. Features:

Contextual Info: VND5E050J-E VND5E050K-E Double channel high side driver for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ) ILIMH 27 A Off-state supply current

RG 56

Abstract: igbt 300V 10A datasheet
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage