MJ 14 X 1,5 - 4 Search Results

eon f80

Abstract: 9T16 1850NM ICM50
Contextual Info: ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06* LN 9 S18 A1 JK 10 OP 9 PSIG PSI L 9 PSI 50/06* PSIG 50/06 E 2 PSIS 50/06*

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

Semipack skfh 40

Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
Contextual Info: Ifrms maximum values for continuous opïeration V rsm V rrm 130 A V 60A(94°C) | 130 A [ 300A Ifav (sin. 180; Tea58 ” «••°C; 50 Hz 160 A (86 °C) 60A(94°C) 300 A 160 A (86 °C) SKFH110/04. 400 800 SKFH 40/08 SKFH 60/08. SKFH110/08. SKKD 160 M08

Contextual Info: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

TO-238

Abstract: JE23 FP1010
Contextual Info: SEMIKRON INC is E o I a i3 f c > b 7 3 i ' 0 7 _ V rs M V rrm Ifrms maximum value for continuous operation 40 A V Ifav (sin. 180; Tease = 85 °C; 50 Hz) 15,2 A 400 SKLD 20 F 04 SKM D 20 F 04 600 S KLD 20 F 06 SKM D 20 F 06 800 S KLD 20 F 08 SKM D 20 F 08

300V dc dc boost converter

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4

BSM 225

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

BSM 15 GB

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

24TRANSISTOR

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

BSM 15 GB

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

IF1400

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 16 KF6 - B1 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 16 40 2,5 deep C2 53 18 G2 44 2,5 deep 57 E1 C2 C1 E2 E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

data sheet for m1104 rf transistor

Abstract: m1104 rf transistor TAG 8926 transistor m1104 M1104 B57087 ntc k277 thermistor k276 B57861 siemens NTC DIN iso 13715
Contextual Info: Contents Index of Types 5 9 Selector Guide Applications 11 19 General Technical Information 23 Data Sheets 45 Standardized R/T Characteristics Mounting Instructions Quality Environmental Protection, Climatic Conditions Taping and Packing Symbols and Terms

inversor dc a ac

Abstract: FLT 350 ST PHOENIX FLASHTRAB FLT-35 FLT100 CTRL15 VAL-MS 350 ST inversor
Contextual Info: POWERSET BC-440/3+1-100/FM Installation Instructions L-N POWERSET BC-440/3+1-100/FM 28 59 44 0 VAL-MS 400/FM UN – 400 V AC 230 V UC 440 V AC 50/60 Hz 440 V AC 260 V AC 50/60 Hz MPB 18/1-8-BU ZBN 18 ≤ 1,5 kV ≤ 2,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω

Contextual Info: APTC60AM45BC1G Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Solar converter 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 10 Features • CoolMOS

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DLS 07.05.1998 BSM 400 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

SKiiP 82 AC 12 i t 1

Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
Contextual Info: SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values