MJ 1352 Search Results

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

GB30RF60K

Abstract: single phase inverter
Contextual Info: GB30RF60K Vishay High Power Products IGBT PIM Module, 27 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

GB15RF60K

Contextual Info: GB15RF60K Vishay High Power Products IGBT PIM Module, 17 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

Contextual Info: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V

Contextual Info: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1100 A VF125 = 3.11 V VCE125 = 3.0 V =

N-channel MOSFET to-247

Abstract: 25N40 mosfet 400V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

VUB135-22NO1

Abstract: vub135 E72873 135-22NO1
Contextual Info: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1000 A VF125 = 3.11 V VCE125 = 3.0 V =

GB30RF60K

Abstract: ntc 901
Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

smd diode UJ 64 A

Abstract: smd diode marking UJ M600 AN-994 IRL540S SMD-220 smd marking LG
Contextual Info: International Rectifier PD-9.910 IRL540S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature

marking WV4

Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
Contextual Info: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: International ik » i Rectifier uassMsa ooisaba 53b HEXFET Power MOSFET INTERNATIO N AL R E C T IF IE R • • • • • • • IN R PD-9.910 IR L 5 4 0 S Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

RTR020P02

Abstract: 028e PMOSFET
Contextual Info: SPICE PARAMETER RTR020P02 by ROHM TR Div. * RTR020P02 PMOSFET model * Date: 2006/09/20 * This model includes a diode between drain and source. *D G S .SUBCKT RTR020P02 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6

k 3525 MOSFET

Contextual Info: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary

12v inverter

Abstract: The sine wave inverter
Contextual Info: 7MBR50SB140 IGBT Modules IGBT MODULE S series 1400V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

7MBR75UB120

Contextual Info: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

7MBR50UB120

Abstract: dc ac inverter schematic igbt Power INVERTER schematic circuit sine wave inverter rg3380 DC DC converter 5v to 200V ic 7MBR50u
Contextual Info: 7MBR50UB120 IGBT Modules IGBT MODULE U series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

7MBR100UB120

Contextual Info: 7MBR100UB120 IGBT Modules IGBT MODULE U series 1200V / 100A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

mj 1504

Abstract: uu 10.5 93x16
Contextual Info: UU Cores ʳ UU Cores F EMI suppression in mains filters. Power Inductor. H z z Shapes A Application F 2 Mn-Zn Cores D C B Dimensions and Characteristics UU 10.5 x 5 12 x 3.9 15 x 6.4 15.7 x 6 15.7 x 6.4 A 9.8±0.2 10.5±0.4 12.0±0.5 15.0±0.4 15.7±0.5 15.7±0.5

7MBR75UB120

Abstract: 7MBR75UB-120 12 volt dc to 120 volt ac Inverter schematic
Contextual Info: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier