MJ 10050 Search Results

SDL-3245-J5

Abstract: SDL-3231-G7 SDL-3230 SDL-3235-J5 L-3245 sdl 3000 series SDL-3233-HD L-3253-H SDL3231G7 SDL3235
Contextual Info: 50/60/100 WQCW LINEAR ARRAYS, 100-5000 W QCW STACKED ARRAYS Up to 2000 mJ Energy/Pulse 10 ¡j s -1 ms Pulse Width Monolithic Linear or Multi-Layer 2-D Stack High Efficiency MOCVD Quantum Well Design 20% Duty Factor Versions Lensed Versions Ideal as efficient optical pumps for solid state la­

l00a

Contextual Info: A dvanced P o w er Te c h n o lo g y A P T 10050JVR 1000V 19A 0.500ÌÌ POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: ADVANCED POW ER Te c h n o lo g y A P T 1000V 10050 J V R 19A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

T0360NA25A

Abstract: D-68623 T0360 TX031NA25A
Contextual Info: WESTCODE Date:- 28 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Bi-Polar Gate Transistor Type T0360NA25A Development Type Number: TX031NA25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage

26108

Abstract: SCR 2140 smps by 3525 "drum core" AL
Contextual Info: Signal Transformer H igh F requ en cy Drum Core A nd Toroidal In ductors P o w er Inductors FOCI - F e rrite Drum Core i b ^'MW rect Through H ole M ount lit 15181 FAX: 2 3 9 -5 7 7 7 S ’ «> 2 3 9 -7 2 0 8 Low Cost High Frequency inductors Signal’s FDCI Drum Core Inductors have excellent electrical and mechanical characteristics for a wide range of

ZTB912JF101

Abstract: ta8150n LA1888N Chequers ztb ZTB912JF Chequers Electronic LA1888 TA8132N ZTB456F11 699k
Contextual Info: Chequers Electronic China Limited Ceramic Resonator (KHz) REACH Compliant (15 SVHCs) RoHS Compliant Regulation (EC) No. 1907/2006 Directive 2002/95/EC ● Dimension ZTBF Freq. (KHz) 375 B Dimension A B C D E F G H J F A G E D 441 510 700 to to to to 440

Contextual Info: 2SK2898-01 N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,0065Ω ±100A 150W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

2SK2899-01R

Contextual Info: 2SK2899-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 6,5mΩ ±100A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

max083

Abstract: 2SK2898-01 MJ 10050
Contextual Info: 2SK2898-01 N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,0065Ω ±100A 150W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Contextual Info: 2SK2899-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 6,5mΩ ±100A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

2SK2899-01R

Contextual Info: H 0 4 -0 0 4 -0 7 Th is m aterial and the inform ation herein is he p rop erty of Fuji E le ctric C o .,Ltd . They shall be neither reproduced, copied, lent, or d isc lo se d in any w ay w h atso e ve r For the use of any third party nor used for the m anufacturing p urp oses without

3150 mosfet

Abstract: MOSFET 20V 100A 2SK2899-01R FUJI MOSFET
Contextual Info: 2SK2899-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-3PF Applications Switching regulators

3150 mosfet

Abstract: 2SK2898-01 "Power MOSFET" FUJI MOSFET
Contextual Info: 2SK2898-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-3P Applications Switching regulators

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By P U B U IC A T IO N R IG H TS - - R E V IS IO N S RESERVED. G - LTR D E S C R IP T IO N H2 D REVISED PER DATE ECO-1 1-005027 APVD RK HMR I 2MAR1 D S E R R A T IO N S

SINGLE LEAD TO-218

Abstract: ruru10060 ruru URU100 TA49019 URU10060
Contextual Info: H A R R IS S E M I C O N D U C T O R RURU10040, RURU10050 RURU10060 100A, 400V - 600V Ultrafast Diodes D ecem ber 1993 Package Features • Ultrafast with Soft Recovery.<80ns JEDEC STYLE SINGLE LEAD TO-218 TOP VIEW • Operating