MITSUBISHI GATE ARRAY Search Results

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

A8512

Abstract: 28P2C-A
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5278EJ,VP-10,-12 M5M5278EJ,VP-10,-12 262144-BIT 32768-WORD 8-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BYBY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5278E is a family of 32768-wordby 8-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS

m5m5v278ej

Abstract: VP10 28P2C-A
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5V278EJ,VP-10,-12 M5M5V278EJ,VP-10,-12 262144-BIT 32768-WORD 8-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BYBY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V278E is a family of 32768-wordby 8-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS

Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5257EJ-10,-12 M5M5257EJ-10,-12 262144-BIT 262144-WORD BYBY 1-BIT CMOS STATIC RAM 262144-BIT (262144-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M5257E is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS

28P2C-A

Abstract: M5M5V278DVP M5M5V278DP VP-15
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5V278DP,J,VP-15,-20 M5M5V278DP,J,VP-15,-20 262144-BIT 32768-WORD BYBY 8-BIT CMOS STATIC RAM 262144-BIT (32768-WORD 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V278D is a family of 32768-wordby 8-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS

M66257

Abstract: M66257FP
Contextual Info: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66257FP M66257FP 5120 x 8-BIT 2 LINE MEMORY FIFO 5120 × 8-BIT × 2×LINE MEMORY (FIFO) DESCRIPTION The M66257FP is a high-speed line memory with a FIFO (First In First Out) structure of 5120-word × 8-bit double configuration which uses high-performance silicon gate CMOS

0D96

Abstract: 28P2W-C M66255FP photocopiers Nk d9
Contextual Info: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66255FP M66255FP 8192 x 10-BIT LINE MEMORY FIFO 8192 × 10-BIT LINE MEMORY (FIFO) DESCRIPTION The M66255FP is a high-speed line memory with a FIFO (First In First Out) structure of 8192-word × 10-bit configuration which uses high-performance silicon gate CMOS process technology.

TD 6316 AP

Abstract: TRANSISTOR BH 4216 001FFF16 mitsubishi split ac packege specifications eiaj M37902FCCHP M37902FGCHP M37902FJCHP
Contextual Info: MITSUBISHI MICROCOMPUTERS M37902FCCHP, M37902FGCHP, M37902FJCHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION These are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These microcomputers support the 7900 Series instruction

Contextual Info: MITSUBISHI LSIs c, M 5 M 2 8 F 0 1 6 F P ,V P ,R V -1 0 ,-1 2 ,-1 5 16777216-BIT 2097152-WORD BY8-BIT CMOS FLASH MEMORY DESCRIPTION The Mitsubishi M 5M 28F016FP, V P , RV are high-speed 16777216-bit CMOS Flash Memories suitable for solid state storage. The M5M28F016FP, VP, RV are fabricated by Nchannel double polysilicon gate for the memory cell and

10MHZ

Contextual Info: Preliminary Specifications REV.B Mitsubishi microcomputers M3062GF8NFP/GP Specifications in this manual are tentative and subject to change. Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M3062GF8N of single-chip microcomputers are built using the high-performance silicon gate CMOS

32P0K

Abstract: M5M54R01J-12 M5M54R01J-15
Contextual Info: MITSUBISHI LSIs M5M54R01J-12,-15 1997.11.20 Rev.F 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M54R01J is a family of 4194304-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

m66258fp

Abstract: M66258
Contextual Info: MITSUBISHI <DIGITAL ASSP> M66258FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.

M37720s1afp

Contextual Info: MITSUBISHI MICROCOMPUTERS M37720S1AFP 16-BIT CMOS MICROCOMPUTER M37720S1FP is unified into M37720S1AFP. DESCRIPTION PIN CONFIGURATION TOP VIEW The M37720S1AFP is a 16-bit microcomputer designed with high-performance CMOS silicon gate technology. This is housed ¡n a 100-pin plastic molded QFP.

ao21

Contextual Info: MITSUBISHI LSIs M5M5V4R01J-12,-15 1997.11.20 Rev.F 4194304-BIT 4194304-WQRD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R01J is a family of 4194304-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

32P0K

Abstract: M5M54R04J-12 M5M54R04J-15
Contextual Info: MITSUBISHI LSIs M5M54R04J-12,-15 1997.11.20 Rev.F 4194304-BIT 1048576-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M54R04J is a family of 1048576-word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

32P0K

Abstract: M5M5V4R04J-12 M5M5V4R04J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R04J-12,-15 1997.11.20 Rev.F 4194304-BIT 1048576-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R04J is a family of 1048576-word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

M66282FP

Contextual Info: MITSUBISHI <DIGITAL ASSP> M66282FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.

524,288 x 8bit

Abstract: M5M54R08J-12 M5M54R08J-15 524288-WORD
Contextual Info: MITSUBISHI LSIs M5M54R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M54R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

32P0K

Abstract: M5M5V4R01J-12 M5M5V4R01J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R01J-12,-15 1997.11.20 Rev.F 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R01J is a family of 4194304-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

M5M5V4R08J-12

Abstract: M5M5V4R08J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

M66280FP

Contextual Info: MITSUBISHI <DIGITAL ASSP> M66280FP 5120 x 8-BIT LINE MEMORY DESCRIPTION The M66280FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 5120 words x 8 bits.

Contextual Info: MITSUBISHI DIGITAL ASSP M66256FP 5120 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66256FP is a high-speed line memory with a FIFO (First In First Out) structure of 5120-word x 8-bit configuration which uses high-performance silicon gate CMOS process technology.

Contextual Info: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word x 8-bit configuration which uses high-performance silicon gate CMOS process