MITSUBISHI 2SC Search Results

MELPS

Abstract: C 3886 2SC3580 3B16 M38867E8AFS M38867E8AHP M38867M8A-XXXHP 29VCC MFA Motor RE 385 M5M5256
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3886 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products

Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3803/3804 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products

3803/3804

Abstract: M38039FFSP SDIP64-P-750-1 RT1N144C "Philips Semiconductors" Catalog
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3803/3804 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor

Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 38B7 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

PBD 3511

Abstract: Musical tuner ICs M38B79MFH-XXXXFP 001C 38B7 M35501FP pbd 3523 38B5 Group
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 38B7 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

2SC738

Abstract: 2SC7 FT440
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4258 FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4258 is a super mini package resin sealed silicon NPN epitaxial Unit:mm OUTLINE DRAWING

2SC4266

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.

2SC2320L

Abstract: h a 431 transistor RO10K
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX

transistor marking 2A H

Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.

2SG3053

Abstract: 2SC3053
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „

2SC5170

Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for

2SC5169

Abstract: low noise transistor table
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING

2sc1914

Abstract: 2SC1914A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1914A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1914A is a silicon NPN epitaxial type high voltage transistor OUTLINE DRAWING Unit: mm ¿ 5.6MAX

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3580 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3580 is a silicon NPN epitaxial type transistor. Unit: mm ¿5.1M A X Complementary with 2SA1398.

2SC3581

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3581 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3581 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Unitrmm ¿5.1 MAX

2SC1708

Abstract: 2SC170 2SC1708A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

2SC1310

Abstract: transistor 5104 db CC103 2cC103
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.

R T O BH TRANSISTOR

Abstract: 2SC5168 transistor CR NPN
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.

2sc3052

Abstract: MARKING HRA MARKING XL
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.

2sc2320

Abstract: TRANSISTOR 2sc2320 2SC2320/L
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPfTAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.

diode marking YG

Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.

2SC5209

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5209 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE.