MINI BALL CORNER Search Results

BGA-56 DATASHEET

Abstract: mini ball corner PQFP die size cpga dimensions BGA-64 pad atmel 0945 PQFP 132 PACKAGE DIMENSION
Contextual Info: pkg-3.7-04/99 Packaging Introduction . 4-3 Package Options: Table . 4-3

Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History History Issue Date Remark 0.0 Initial issue November 30, 2001 Preliminary 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2 Change VCCmax from 3.1V to 3.3V

Contextual Info: A64S9316A Preliminary 512K X 16 Bit Low Voltage Super RAM Document Title 512K X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0 AMIC Technology, Corp.

A12C

Abstract: A14C A15C CY62127V
Contextual Info: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq

A64S0616

Abstract: A64S0616G-55 A64S0616G-70
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

SD card CARD PCB FOOTPRINT

Abstract: micro sd Micro SD chip BGF117 IEC610004-2 microsd microSD application note MICRO SD card footprint PCB microsd specification WLP 35 SAFETY
Contextual Info: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.

Contextual Info: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.

A64S0616

Abstract: A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

0.3mm pitch BGA

Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

A64E06161

Abstract: A64E06161G A19 SMD
Contextual Info: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No.

Contextual Info: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 12, 2003 Preliminary October, 2003, Version 0.0 AMIC Technology, Corp.

Contextual Info: A64S0616A Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 18, 2005 Preliminary February, 2005, Version 0.0 AMIC Technology, Corp.

Contextual Info: Hipac High performance passive and actives on chip BGF149 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter Datasheet Rev. 1.3, 2012-06-20 Final Power Management & Multimarket Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany

BGF149

Abstract: N0771 trimble R6 sirius D4 WLP15
Contextual Info: Hipac High performance passive and actives on chip BGF149 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter Datasheet Rev. 1.3, 2012-06-20 Final Power Management & Multimarket Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns

A64E06161

Abstract: A64E06161G
Contextual Info: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns

Contextual Info: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns

100PF

Abstract: BS62LV2007 BS62LV2007HC BS62LV2007HI BS62LV
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current

JEDEC Drawing MO-153, Variation AA

Abstract: AT24C128BN-SH-T AT24C128BN-SH-B AT24C128B AT24C128BD3-DH-T AT24C128B-PU AT24C128B-TH-B AT24C128B-TH-T AT24C128BU2-UU-T AT24C128BY6-YH-T
Contextual Info: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility

5296a

Abstract: AT24C128BN-SH-T AT24C128BY6-YH-T AT24C128B AT24C128BN-SH-B AT24C128B-TH-T atmel lot marking atmel lot marking eeprom atmel part marking mo-229 nseb
Contextual Info: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility

bga 6x8

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current

5296A

Contextual Info: 1. Features • Low-voltage and Standard-voltage Operation • • • • • • • • • • • • – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol